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SNA-100S 参数 Datasheet PDF下载

SNA-100S图片预览
型号: SNA-100S
PDF下载: 下载PDF文件 查看货源
内容描述: DC - 10 GHz时,可级联的GaAs HBT MMIC放大器 [DC-10 GHz, Cascadable GaAs HBT MMIC Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 169 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Product Description
Sirenza Microdevices’ SNA-100S is a GaAs monolithic
broadband amplifier (MMIC) in die form. This amplifier
provides 12.2dB of gain at 1950 MHz and 10.3dB at
10,000 MHz.
These unconditionally stable amplifiers are designed for use
as general purpose 50 ohm gain blocks. Its small size
(0.350mm x 0.345mm) and gold metallization make it an
ideal choice for use in hybrid circuits. The SNA-100S is
100% DC tested and sample tested for RF performance.
External DC decoupling capacitors determine low frequency
response. The use of an external resistor allows for bias
flexibility and stability.
The SNA-100S is supplied in gel paks of 100 devices.
Also available in packaged form (SNA-176 & SNA-186)
Output Power vs. Frequency
13
12
SNA-100S
DC-10 GHz, Cascadable
GaAs HBT MMIC Amplifier
Product Features
Cascadable 50 Ohm Gain Block
12.2dB Gain, +11dBm P1dB
1.5:1 Input and Output VSWR
Operates From Single Supply
Through wafer via for ground
Applications
Broadband Driver Amplifier for Fiber & CATV
transmitters
IF Amplifier or gain stage for VSAT, LMDS,
WLAN, and Cellular Systems
dBm
11
10
9
8
0.5
1
1.5
2
GHz
4
6
8
10
Symbol
Parameter
Units
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBm
dB
dB
dB
V
mA
dB/°C
°C/W
Frequency
850 MHz
1950 MHz
2400 MHz
6000 MHz
10000 MHz
0.1-8 GHz
1950 MHz
10000 MHz
1950 MHz
10000 MHz
1950 MHz
1950 MHz
0.1-10 GHz
M in.
10.7
T yp.
12.5
12.2
12.0
12.5
10.3
+/- 0.5
10.5
11.0
11.5
24.0
24.0
5
13
16
3.6
40
-0.0015
280
M ax.
13.7
G
p
Small Signal Power Gain [2]
8.8
11.8
Gain Ripple
G
F
BW 3dB 3dB Bandwidth
P
1dB
OIP
3
NF
RL
ISOL
V
D
Output Power at 1dB Compression [2]
Output Third Order Intercept Point [2]
Noise Figure
Input / Output Return Loss
Reverse Isolation
Device Operating Voltage [1]
9
9.5
21
21
3.1
35
4.1
45
Device Operating Current [1]
I
D
dG/dT Device Gain Temperature Coefficient
R
TH
, j-b Thermal Resistance (junction to backside)
Test Conditions:
V
S
= 8 V
R
BIAS
= 110 Ohms
I
D
= 40 mA Typ.
OIP
3
Tone Spacing = 1.2 MHz, Pout per tone = 0 dBm
T
L
= 25ºC, Z
S
= Z
L
= 50 Ohms, [1] 100% DC Tested, [2] Sample Tested
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
303 South Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103299 Rev B