欢迎访问ic37.com |
会员登录 免费注册
发布采购

SNA-300 参数 Datasheet PDF下载

SNA-300图片预览
型号: SNA-300
PDF下载: 下载PDF文件 查看货源
内容描述: DC - 3 GHz的,可级联的GaAs MMIC放大器 [DC-3 GHz, Cascadable GaAs MMIC Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 213 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
 浏览型号SNA-300的Datasheet PDF文件第2页浏览型号SNA-300的Datasheet PDF文件第3页  
Product Description
Sirenza Microdevices’ SNA-300 is a GaAs monolithic broad-
band amplifier (MMIC) in die form. At 1950 MHz, this amplifier
provides 22dB of gain when biased at 35mA .
These unconditionally stable amplifiers are designed for use
as general purpose 50 ohm gain blocks. Its small size
(0.350mm x 0.345mm) and gold metallization make it an ideal
choice for use in hybrid circuits. The SNA-300 is 100% DC
tested and sample tested for RF performance.
External DC decoupling capacitors determine low frequency
response. The use of an external resistor allows for bias
flexibility and stability.
The SNA-300 is supplied in gel paks at 100 devices per pak.
Also available in packaged form (SNA-376 & SNA-386)
Output Power vs. Frequency
12
11
SNA-300
DC-3 GHz, Cascadable
GaAs HBT MMIC Amplifier
Product Features
•
Cascadable 50 Ohm Gain Block
•
22dB Gain, +10dBm P1dB
•
1.5:1 Input and Output VSWR
•
Operates From Single Supply
•
Through wafer via for ground
Applications
•
Broadband Driver Amplifier
•
IF Amplifier or gain stage for VSAT, LMDS,
WLAN, and Cellular Systems
dBm
10
9
8
0.1
0.5
1
1.5
GHz
2
4
6
8
10
Symbol
Parame te r
Units Fre que ncy M in. T yp. M ax.
dB
dB
dB
GHz
dB m
dB m
dB
dB
dB
V
mA
dB /°C
°C/W
1950 M Hz
1950 M Hz
1950 M Hz
1950
0.1-3.0 GHz
3.3
30.0
8.0
20.0
850 M Hz
1950 M Hz
2400 M Hz
23.0
22.0
21.5
3.0
10.0
23.0
4.0
11.7
20.0
3.7
35.0
-0.003
260.0
G
p
S m all S ignal P ower Gain [2]
20.5
20.0
23.5
23.0
B W 3dB 3dB B andwidth
P
1dB
OIP
3
NF
RL
IS OL
V
D
Output P ower at 1dB Com press ion [2]
Output Third Order Interc ept P oint [2]
Nois e Figure
Input / Output Return Los s
Reverse Isolation
Device Operating V oltage [1]
4.1
40.0
I
D
Device Operating Current [1]
dG/dT Device Gain Tem perature Coefficient
R
TH
, j-b Therm al Res istanc e (junction to bac ks ide)
Test Conditions:
V
S
= 8 V
R
BIAS
= 120 Ohms
I
D
= 35 mA Typ.
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0
T
L
= 25ºC, Z
S
= Z
L
= 50 Ohms, [1] 100% DC tested, [2] Sample tested
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
303 South Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102432 Rev B