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SPA-1118Z 参数 Datasheet PDF下载

SPA-1118Z图片预览
型号: SPA-1118Z
PDF下载: 下载PDF文件 查看货源
内容描述: 850兆赫1瓦功率放大器的有源偏置 [850 MHz 1 Watt Power Amplifier with Active Bias]
分类和应用: 放大器射频微波功率放大器
文件页数/大小: 5 页 / 109 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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SPA-1118
Product Description
Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 850 MHz band.
Its high linearity makes it an ideal choice for wireless data and
digital applications.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and
is RoHS compliant per EU Directive 2002/95. This package
is also manufactured with green molding compounds that
contain no antimony trioxide nor halogenated fire retardants.
SPA-1118Z
Pb
RoHS Compliant
&
Green
Package
850 MHz 1 Watt Power Amplifier
with Active Bias
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• High Linearity Performance:
+21 dBm IS-95 Channel Power at -55 dBc ACP
+48 dBm OIP3 Typ.
• On-chip Active Bias Control
• Patented High Reliability GaAs HBT Technology
• Surface-Mountable Plastic Package
VCC
VBIAS
RFIN
N/C
Input
Match
Active Bias
N/C
N/C
RFOUT/
VCC
N/C
Applications
Multi-Carrier Applications
AMPS, ISM Applications
S ym b o l
f
0
P
1dB
ACP
S
21
VSWR
OIP
3
NF
I
C C
V
CC
R
th,
j-l
P a ra m e te rs: Tes t C o n d itio n s :
Z
0
= 5 0 Oh m s , V
C C
= 5 V, Te m p = 2 5ºC
F re que ncy o f Op e ra tion
Output P o we r a t 1 dB C o m p re ssio n
A d ja cent C ha nne l P o wer
IS -9 5 @ 8 80 M Hz, ± 88 5 K Hz, P
OUT
= 2 1 dB m
S m all S ig nal Ga in, 88 0 M Hz
Inp ut V S W R
Output Third Ord er Inte rce pt P o int
P o we r o ut p er tone = +1 4 d B m
No ise F igure
D e vice C urre nt
D e vice Vo lta g e
Therm al Resistance (junctio n - lea d ) , T
L
=8 5ºC
U n its
M Hz
dB m
dB c
dB
-
dB m
dB
mA
V
ºC /W
M in .
81 0
Typ .
M ax .
960
29 .5
-5 7.0
1 6.2
1 7.2
1 .5:1
4 8 .0
7.5
27 5
4 .75
3 10
5.0
35
330
5 .2 5
-5 4.0
1 8 .2
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights
reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101427 Rev I