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SPA-1218 参数 Datasheet PDF下载

SPA-1218图片预览
型号: SPA-1218
PDF下载: 下载PDF文件 查看货源
内容描述: 1960兆赫1瓦功率放大器的有源偏置 [1960 MHz 1 Watt Power Amplifier with Active Bias]
分类和应用: 放大器射频微波功率放大器
文件页数/大小: 5 页 / 95 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Product Description
Sirenza Microdevices’ SPA-1218 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 1960 MHz PCS
band. Its high linearity makes it an ideal choice for multi-carrier
and digital applications.
SPA-1218
1960 MHz 1 Watt Power Amplifier
with Active Bias
Product Features
High Linearity Performance:
VBIAS
RFIN
N/C
Input
Match
RFOUT/
VCC
Patented High Reliability GaAs HBT Technology
Surface-Mountable Plastic Package
Symbol
f
0
P
1dB
AC P
S
21
S
11
OIP
3
NF
I
CC
R
EC
O
M
M
EN
D
ED
Parameters: Test Conditions:
Z
0
= 50 Ohms, V
CC
=5V, Temp = 25ºC
Frequency of Operation
FO
R
Applications
PCS Systems
Multi-Carrier Applications
Units
MHz
dB m
dB c
dB
-
dB m
dB
mA
V
ºC/W
275
4.75
11.5
Min.
1930
29.0
-55.0
12.5
1.5:1
48.0
7.0
310
5.0
35
330
5.25
-52.0
13.5
Typ.
Max.
1990
Output Power at 1dB Compression
[1,2]
Adjacent Channel Power
[1]
IS-95 @1960MHz, ±885 KHz, P
OUT
= 21.3 dBm
Small Signal Gain
[1,2]
Input VSWR
[1,2]
N
O
T
Output Third Order Intercept Point
Power out per tone = +14 dBm
Noise Figure
[1,2]
[2]
Device Current
[1,2]
V
CC
R
th
, j-l
Device Voltage
[1,2]
Thermal Resistance (junction - lead) , T
L
=85ºC
[1] Optimal ACP tune
[2] Optimal IP3 tune
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
N
EW
VCC
Active
Bias
+21.3 dBm IS-95 Channel Power at -55 dBc ACP
+48 dBm OIP3 Typ.
On-chip Active Bias Control
D
ES
IG
N
S
http://www.sirenza.com
EDS-101428 Rev G