SPA-2318
Product Description
Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in a
low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial growth
technology which produces reliable and consistent performance
from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier
for infrastructure equipment in the 1960 and 2140 MHz bands. Its
high linearity makes it an ideal choice for multi-carrier and digital
applications.
SPA-2318Z
Pb
&
Green
Preliminary
Package
RoHS Compliant
1700-2200 MHz 1 Watt Power Amp
with Active Bias
Product Features
The matte tin finish on Sirenza’s lead-free package utilizes a post
• Now available in Lead Free, RoHS
annealing process to mitigate tin whisker formation and is RoHS
Compliant, & Green Packaging
compliant per EU Directive 2002/95. This package is also manu-
• High Linearity Performance:
factured with green molding compounds that contain no antimony
+21 dBm IS-95 Channel Pwr at -55 dBc ACP
trioxide nor halogenated fire retardants.
+20.7 dBm W-CDMA Channel Pwr at -50dBc ACP
VC1
VBIAS
RFIN
VPC2
Active
Bias
RFOUT/
VC2
+47 dBm Typ. OIP3
• On-chip Active Bias Control
• High Gain: 24 dB Typ. at 1960 MHz
• Patented High Reliability GaAsHBT Technology
• Surface-Mountable Plastic Package
Applications
• W-CDMA Systems
• PCS Systems
• Multi-Carrier Applications
Symbol
f
0
P
1dB
Parameters: Test Conditions:
Z
0
= 50 Ohms Temp = 25ºC, Vcc = 5.0V
Frequency of Operation
Output Power at 1dB Compression
[1]
Adjacent Channel Power
[1]
IS-95 @ P
OUT
= 21.0 dBm
W-CDMA @ P
OUT
= 20.7 dBm
Small Signal Gain
Input VSWR
[1,2]
[1,2]
Units
MHz
f = 1960 MHz
f = 2140 MHz
f = 1960 MHz
f = 2140 MHz
f = 1960 MHz
f = 2140 MHz
f = 1960 MHz
f = 2140 MHz
dBm
Min.
1700
Typ.
Max.
2200
29.5
29.5
-55.0
-50.0
22.5
24.0
23.5
1.6:1
1.6:1
46.5
47.0
5.5
5.5
360
4.75
ACP
dBc
-47.0
25.0
S
21
VSWR
OIP
3
NF
dB
-
-
dBm
dB
Output Third Order Intercept Point
Power out per tone = +14dBm
Noise Figure
[1,2]
[2]
f = 1960 MHz
f = 2140 MHz
f = 1960 MHz
f = 2140 MHz
Ibias = 10 mA
Ic1 = 70 mA
Ic2 = 320 mA
I
CC
V
CC
R
th j-l
Device Current
Device Voltage
[1,2]
mA
400
5.0
425
5.25
[1,2]
V
ºC/W
Thermal Resistance (junction - lead), T
L
= 85ºC
31
[1] Optimal ACP tune
[2] Optimal IP3 tune
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights
reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101432 Rev H
SIRENZA [ SIRENZA MICRODEVICES ]
