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SPB-3018 参数 Datasheet PDF下载

SPB-3018图片预览
型号: SPB-3018
PDF下载: 下载PDF文件 查看货源
内容描述: 800 - 2400兆赫1W中功率有源偏置的InGaP /砷化镓HBT放大器 [800 - 2400 MHz 1W Medium Power Active Bias InGaP/GaAs HBT Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 9 页 / 206 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Preliminary
Product Description
The SPB-3018 is high-efficiency InGaP/GaAs Heterojuction Bipolar
Transistor (HBT) amplifier RFIC. This amplifier incorporates an on-chip
Class AB bias circuit which provides excellent efficiency while maintain-
ing good linearity. The on-chip bias also allows the device output power
(and current) to drive up towards saturation as the input power in-
creases. The SPB-3018 is an ideal choice for multi-carrier as well as
digital wireless telecom or general wireless applications in the 400-2500
MHz range. This amplifier is a robust, reliable, and rugged part with
Class 1C HBM ESD rating, low operating junction temperature (Tj<125 ºC
at 85 ºC lead), and excellent moisture resistance (MSL 1).
SPB-3018
SPB-3018Z
Pb
RoHS Compliant
&
Green
Package
800 - 2400 MHz 1W Medium Power
Active Bias InGaP/GaAs HBT Amplifier
-30
-35
-40
-45
Typical ACP (IS-95) & Efficiency @ 1960MHz
ACP 25C
Eff. % 25C
22.5
20
17.5
Product Features
Efficiency
Available in Lead Free, RoHS compliant, & Green packaging
Efficient Class AB operation
P1dB = 30 dBm @ 1960MHz
High Linearity/ACP performance
Robust 1000V ESD, Class 1C
MSL 1 moisture rating
15
12.5
10
7.5
5
2.5
0
15
16
17
18
19
20
21
22
23
24
ACP
-50
-55
-60
-65
-70
-75
Power shutdown using V
PC
(less than 5uA I
DQ
)
Applications
W-CDMA, PCS, Cellular Systems
Multi-Carrier Applications
Units
Frequency
Min.
Typ.
Max.
Ch. Power
Symbol
Parameters
P
1dB
Output Power at 1 dB Compression
*
dBm
880 MHz
1960 MHz
2140 MHz
880 MHz
1960 MHz
2140 MHz
880 MHz
1960 MHz
2140 MHz
12
30
30
30
18
13.5
13
1.3:1
1.2:1
1.3:1
21.5
22
21
5
4
4
4.75
180
5
220
30
5.25
260
15
S
21
Small Signal Gain
dBm
S
11
Input VSWR
Channel Power
ACP
IS-95 at 880/1960MHz, -55dBc ACP
WCDMA at 2140MHz, -50dBc ACP
dBm
880 MHz
1960 MHz
2140 MHz
880 MHz
1960 MHz
2140 MHz
NF
V
D
I
DQ
R
TH
, j-l
Test Conditions:
Noise Figure
Device Operating Voltage
Device Quiescent Current
Thermal Resistance (junction - lead)
T
a
= 25°C
Z
O
= 50 Ohms
dB
V
mA
°C/W
*
Device operating current at P1dB ramps up to approximately 420mA @880MHz, 410mA @1960MHz and 370mA @2140MHz
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103980 Rev A