欢迎访问ic37.com |
会员登录 免费注册
发布采购

SUF-3000 参数 Datasheet PDF下载

SUF-3000图片预览
型号: SUF-3000
PDF下载: 下载PDF文件 查看货源
内容描述: 0.25-16千兆赫,可级联的pHEMT MMIC放大器 [0.25-16 GHz, Cascadable pHEMT MMIC Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 4 页 / 136 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
 浏览型号SUF-3000的Datasheet PDF文件第2页浏览型号SUF-3000的Datasheet PDF文件第3页浏览型号SUF-3000的Datasheet PDF文件第4页  
Preliminary
SUF-3000
Product Description
Sirenza Microdevices’ SUF-3000 is a monolithically matched broadband
high IP3 gain block covering 0.25-16 GHz. This pHEMT FET-based
amplifier uses a patented self-bias Darlington topology featuring a gain
and temperature compensating active bias network that operates from
a single 5V supply. It offers efficient, cascadable performance in a
compact 0.88 x 0.80 mm
2
die. It is well-suited for RF, LO, and IF driver
applications.
Gain & Return Loss vs. Frequency
(GSG Probe Data)
12
10
8
Gain (dB)
6
4
IRL
2
0
0
4
8
12
16
20
Fre que ncy (Ghz)
-25
-30
ORL
\
-20
GAIN
0
-5
-10
-15
Return Loss (dB)
0.25-16 GHz, Cascadable pHEMT
MMIC Amplifier
Product Features
Broadband Performance
Gain = 10 dB @ 6 GHz
P1dB = 15.5 dBm @ 6 GHz
Low-noise, Efficient Gain Block
5V Operation, No Dropping Resistor
Low Gain Variation vs. Temperature
Patented Thermal Design
Patented Self-Bias Darlington Circuit
Applications
Broadband Communications
Test Instrumentation
Military & Space
LO and IF Mixer Applications
High IP3 RF Driver Applications
Symbol
Parameters
Units
Frequency
Min.
Typ.
Max.
G
p
Small Signal Power Gain
dB
P1dB
Output Power at 1dB Compression
dBm
OIP3
Output Third Order Intercept Point
dBm
NF
Noise Figure
dB
IRL
Input Return Loss
dB
ORL
Output Return Loss
dB
Isol
V
D
I
D
ΔG/ΔT
Rth, j-l
Reverse Isolation
Device Operating Voltage
Device Operating Current
Device Gain Temperature Coefficient
Thermal Resistance (junction-to-backside)
dB
V
mA
dB/°C
°C/W
2 GHz
6 GHz
14 GHz
2 GHz
6 GHz
14 GHz
2 GHz
6 GHz
14 GHz
2 GHz
6 GHz
14 GHz
2 GHz
6 GHz
14 GHz
2 GHz
6 GHz
14 GHz
2 GHz
6 GHz
14 GHz
10.0
10.0
8.0
16.0
15.5
13.5
27.0
26.5
19.5
4.2
4.8
5.0
-22.5
-32.5
14.0
-15.0
-16.5
-17.0
-15.5
-15.0
-15.0
5.0
51
-0.01
224
Test Conditions:
Test Conditions:
V
D
= 5.0V, I
D
= 51mA, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms, 25C, GSG Probe Data With Bias Tees
V
S
= 5 V
T
L
= 25ºC
I
D
= 80 mA Typ.
Z
S
= Z
L
= 50 Ohms
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Measured with Bias Tees
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-105417 Rev A