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SUF-4000 参数 Datasheet PDF下载

SUF-4000图片预览
型号: SUF-4000
PDF下载: 下载PDF文件 查看货源
内容描述: 0.15-10千兆赫,可级联的pHEMT MMIC放大器 [0.15-10 GHz, Cascadable pHEMT MMIC Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 4 页 / 135 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Preliminary
SUF-4000
Product Description
Sirenza Microdevices’ SUF-4000 is a monolithically matched broadband
high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based
amplifier uses a patented self-bias Darlington topology featuring a gain
and temperature compensating active bias network that operates from
a single 5V supply. It offers efficient, cascadable performance in a
compact 0.88 x 0.80 mm
2
die. It is well-suited for RF, LO, and IF driver
applications.
Gain & Return Loss vs. Frequency
(GSG Probe Data)
30
25
20
Gain (dB)
GAIN
15
\
10
ORL
5
0
0
3
6
9
12
15
Fre que ncy (Ghz)
-25
-30
-20
-15
IRL
0
-5
-10
Return Loss (dB)
0.15-10 GHz, Cascadable pHEMT
MMIC Amplifier
Product Features
Broadband Performance
High Gain = 17.0 dB @ 2 GHz
P1dB = 21 dBm @ 2 GHz
Low-noise, Efficient Gain Block
5V Operation, No Dropping Resistor
Low Gain Variation vs. Temperature
Patented Thermal Design
Patented Self-Bias Darlington Topology
Applications
Broadband Communications
Test Instrumentation
Military & Space
LO and IF Mixer Applications
High IP3 RF Driver Applications
Symbol
Parameters
Units
Frequency
Min.
Typ.
Max.
G
p
P1dB
OIP3
NF
IRL
ORL
Isol
V
D
I
D
ΔG/ΔT
Rth, j-l
Small Signal Power Gain
Output Power at 1dB Compression
Output Third Order Intercept Point
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Device Operating Voltage
Device Operating Current
Gain Variation vs. Temperature
Thermal Resistance (junction-to-backside)
dB
dBm
dBm
dB
dB
dB
dB
V
mA
dB/°C
°C/W
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
17.0
14.5
21.0
20.0
32.0
30.5
2.8
3.7
12.0
-11.5
-18.0
-20.0
-21.0
-20.0
5.0
73
0.01
164
Test Conditions:
V
S
= 5.0V, I
D
= 73mA,
= 5 V
Tone Spacing
=
=
80 mA Typ.
per tone
OIP
dBm
Spacing = 1 MHz, Pout per tone = 0 dBm
1MHz, Pout
= 0
Tone
V
S
OIP3
I
D
Test Conditions:
3
Z
S
= Z
L
= 50 Ohms,
L
25C, GSG Probe Data
Z
L
= 50 Ohms
T = 25ºC
Z
S
=
With Bias Tees
Measured with Bias Tees
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-105418 Rev A