欢迎访问ic37.com |
会员登录 免费注册
发布采购

SXA-289 参数 Datasheet PDF下载

SXA-289图片预览
型号: SXA-289
PDF下载: 下载PDF文件 查看货源
内容描述: 5-2000兆赫中等功率GaAs HBT功率放大器 [5-2000 MHz Medium Power GaAs HBT Amplifier]
分类和应用: 放大器功率放大器
文件页数/大小: 7 页 / 320 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
 浏览型号SXA-289的Datasheet PDF文件第2页浏览型号SXA-289的Datasheet PDF文件第3页浏览型号SXA-289的Datasheet PDF文件第4页浏览型号SXA-289的Datasheet PDF文件第5页浏览型号SXA-289的Datasheet PDF文件第6页浏览型号SXA-289的Datasheet PDF文件第7页  
Preliminary
Product Description
Sirenza Microdevices’ SXA-289 amplifier is a high
efficiency GaAs Heterojunction Bipolar Transistor (HBT)
MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular
beam epitaxial growth technology which produces reliable
and consistent performance from wafer to wafer and lot to
lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 5-2000 MHz
cellular, ISM, WLL and narrowband PCS applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
SXA-289
5-2000 MHz Medium Power
GaAs HBT Amplifier
Product Features
Patented High Reliability GaAs HBT Technology
High Output 3rd Order Intercept : +41.5 dBm
typ. at 1960 MHz
Surface-Mountable Power Plastic Package
Typical IP3, P1dB, Gain
45
40
35
30
25
20
15
10
5
0
IP3
IP3
dBm
P1dB
Gain(dB)
P1dB
Gain(dB)
Applications
PCS, Cellular Systems
High Linearity IF Amplifiers
850 MHz
1960 MHz
Symbol
P
1dB
S
21
S
11
IP
3
NF
Parameters: Test Conditions:
Z
0
= 50 Ohms, Ta = 25
°C
Output Power at 1dB Compression
Small signal gain
Input VSWR
Output Third Order Intercept Point
(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
Noise Figure
f = 850 MHz
[1]
f = 1960 MHz
[2]
f = 850 MHz
[1]
f = 1960 MHz
[2]
f = 850 MHz
f = 1960 MHz
f = 850 MHz
[1]
f = 1960 MHz
[2]
f = 850 MHz
f = 1960 MHz
[2]
V s = 8V
Rbias = 27 Ohms
V
Device
= 5 V typ.
Units
dB m
dB m
dB
dB
-
dB m
dB m
dB
dB
mA
° C/W
Min.
22.0
22.0
18.0
13.0
Typ.
24.0
24.0
20.0
15.0
1.3:1
1.7:1
Max.
21.5
16.0
38.0
39.0
40.5
41.5
5.0
5.7
6.5
120
I
D
R
th
, j-l
Device Current
[1]
Thermal Resistance (junction - lead)
85
105
108
[1] 100% Production tested.
[2] Sample tested - Samples pulled from each package/wafer lot and tested using application circuit shown on page 5.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-100622 Rev H
1