Product Description
Sirenza Microdevices’ SXA-3318B amplifier is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost
surface-mountable plastic package. These HBT MMICs are fabricated
using molecular beam epitaxial growth technology which produces
reliable and consistent performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver devices for
infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS,
W-CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as well as digital
applications.
The matte tin finish on Sirenza’s lead-free package utilizes a post anneal-
ing process to mitigate tin whisker formation and is RoHS compliant per
EU Directive 2002/95. This package is also manufactured with green
molding compounds that contain no antimony trioxide nor halogenated fire
retardants.
SXA-3318B
SXA-3318BZ
Pb
RoHS Compliant
&
Green
Package
400-2500 MHz
Balanced �½ W Medium Power
GaAs HBT Amplifier with Active Bias
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• On-chip Active Bias Control
• Balanced for excellent input/output VSWR and
minimized reflections
• High OIP3 : +47 dBm typ.
SXA-3318B
5V
• High P1dB : +28 dBm typ.
• Patented High Reliability GaAs HBT Technology
• Surface-Mountable Power Plastic Package
RFin
1
2
3
4
8
7
6
5
Applications
• W-CDMA, PCS, Cellular Systems
RFout
• High Linearity IF Amplifiers
• Multi-Carrier Applications
Symbol
Parameters: Test C onditions: Z
0
= 50 Ohms,
Ta = 25°C , Measured in Evaluation C ircuit
Output Power at 1dB C ompressi on
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 880 MHz
f = 1960 MHz
f = 2140 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
V cc = 5 V
U nits
Min.
Typ.
27.5
28.0
28.0
17.5
12.8
12.0
1.3
1.2
1.2
Max.
P
1dB
dB m
27.0
16.0
dB
10.5
-
44
dB m
44
dB c
19.0
13.5
1.7
S
21
Small si gnal gai n
VSWR
in
Input VSWR
OIP
3
Output Thi rd Order Intercept Poi nt
(Pout/T ne = +11 dBm, T ne spaci ng = 1 MHz)
o
o
Adjacent C hannel Power:
IS-95 at P
OUT
= 19 dBm
IS-95 at P
OUT
= 19 dBm
W-C D MA at P
OUT
= 18 dBm
47
47
47
-55
-55
-50
4.5
5.1
5.1
6.0
AC P
NF
I
D
R
th
, j-l
Noi se Fi gure
D evi ce C urrent (120 mA per ampli fi er)
Thermal Resi stance (juncti on - lead) per ampli fi er
*Note: 2 ampli fi ers per packaged part
dB
mA
° C /W
180
240
70
280
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent
rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or
systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-103164 Rev B
1
SIRENZA [ SIRENZA MICRODEVICES ]
