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SXA-389B 参数 Datasheet PDF下载

SXA-389B图片预览
型号: SXA-389B
PDF下载: 下载PDF文件 查看货源
内容描述: 400-2500兆赫 W¯¯中等功率GaAs HBT放大器,有源偏置 [400-2500 MHz  W Medium Power GaAs HBT Amplifier with Active Bias]
分类和应用: 放大器
文件页数/大小: 8 页 / 146 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Product Description
Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-
mountable plastic package. These HBT MMICs are fabricated using molecular
beam epitaxial growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver devices for
infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-
CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as well as digital
applications.
SXA-389B
SXA-389BZ
Pb
RoHS Compliant
&
Green
Package
400-2500 MHz ¼ W Medium Power
GaAs HBT Amplifier with Active Bias
Product Features
• Now Available in Leed Free, RoHS Compliant, &
Green Packaging
• Lower Rth for increased MTTF
10
8
hrs. at T
Lead
= 85°C
• On-chip Active Bias Control, Single 5V Supply
• Excellent Linearity:
+43 dBm typ. OIP
3
at 1960 MHz
• High P1dB : +25 dBm typ.
• High Gain: +18.5 dB at 850 MHz
• Efficient: consumes only 575 mW
Typical OIP
3
, P1dB, Gain
50
45
40
35
30
25
20
15
10
5
0
850 MHz
1960 MHz
2140 MHz
OIP3
P1dB
Gain
dBm
Applications
2450 MHz
• W-CDMA, PCS, Cellular Systems
• Multi-Carrier Applications
Symbol
Parameters: Test C onditions:
Z
0
= 50 Ohms, Ta = 25°C
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
U nits
Min.
Typ.
25
25
25
25
18.4
13.6
13.5
12.8
1.2:1
1.3:1
1.2:1
1.2:1
41
43
42
41
4.5
4.8
5.0
5.7
Max.
P
1dB
Output Power at 1dB C ompressi on
dB m
24
S
21
Small si gnal gai n
dB
12.5
15
S
11
Input VSWR
-
2.0:1
OIP
3
Output Thi rd Order Intercept Poi nt
(Pout/Tone = +11 dBm, Tone spaci ng = 1 MHz)
dB m
39
NF
Noi se Fi gure
dB
6.3
I
D
P
DISS
R
th
, j-l
D evi ce C urrent
Operati ng D i ssi pated Power
Thermal Resi stance (juncti on - lead)
V cc = 5 V
mA
mW
° C /W
90
115
575
70
135
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights
reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-102915 Rev D
1