Product Description
Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost
surface-mountable plastic package. These HBT MMICs are
fabricated using molecular beam epitaxial growth technology
which produces reliable and consistent performance from wafer to
wafer and lot to lot.
These amplifiers are specially designed for use as driver devices
for infrastructure equipment in the 400-2500 MHz cellular, ISM,
WLL, PCS, W-CDMA applications.
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. This package is also manu-
factured with green molding compounds that contain no antimony
trioxide nor halogenated fire retardants.
Typical IP3, P1dB, Gain
50
45
40
35
30
OIP3
P1dB
Gain
SXA-389
SXA-389Z
Pb
RoHS Compliant
&
Green
Package
400-2500 MHz ¼ W Medium Power
GaAs HBT Amplifier with Active Bias
Product Features
• On-chip Active Bias Control, Single 5V Supply
• High Output 3rd Order Intercept:
+42 to +44 dBm typ.
• High P1dB : +25 dBm typ.
• High Gain: +19 dB at 850 MHz
• High Efficiency: consumes only 600 mW
• Patented High Reliability GaAs HBT Technology
• Surface-Mountable Power Plastic Package
dBm
25
20
15
10
5
0
850 MHz
1960 MHz
2140 MHz
2450 MHz
Applications
• W-CDMA, PCS, Cellular Systems
• High Linearity IF Amplifiers
• Multi-Carrier Applications
Symbol
Parameters: Test Conditions:
Z
0
= 50 Ohms, Ta = 25°C
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
V cc = 5 V
Units
Min.
Typ.
25
25
25
25
19
14
13.5
13
1.3:1
1.4:1
1.3:1
1.1:1
43
44
42
42
4.7
5.5
6.0
6.0
Max.
P
1dB
Output Power at 1dB Compression
dB m
24
S
21
Small signal gain
dB
12.5
15
S
11
Input VSWR
-
OIP
3
Output Third Order Intercept Point
(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
dB m
39
NF
Noise Figure
dB
I
D
P
DISS
R
th
, j-l
Device Current
Operating Dissipated Power
Thermal Resistance (junction - lead)
mA
mW
° C/W
90
115
575
100
122
610
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent
rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or
systems.
Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
Phone: (800) SMI-MMIC
EDS-102231 Rev D
303 S. Technology Ct. Broomfield, CO 80021
1
http://www.sirenza.com
SIRENZA [ SIRENZA MICRODEVICES ]
