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SXB-2089Z 参数 Datasheet PDF下载

SXB-2089Z图片预览
型号: SXB-2089Z
PDF下载: 下载PDF文件 查看货源
内容描述: 5-2500兆赫中等功率的InGaP /砷化镓HBT放大器 [5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 7 页 / 163 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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SXB-2089Z
Product Description
Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/
GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a
low-cost, surface-mountable plastic package.
These amplifiers are specially designed for use as driver devices
for infrastructure equipment in the 5-2500 MHz Cellular, ISM, WLL,
PCS & W-CDMA applications. It’s high linearity makes it an ideal
choice for multi-carrier as well as digital applications.
5-2500 MHz Medium Power InGaP/GaAs
HBT Amplifier
RoHS Compliant
Pb
&
Green
Package
50
45
40
35
30
25
20
15
10
5
0
Typical IP3, P1dB, Gain
IP3
IP3
IP3
Product Features
High OIP3: +43dBm
at 1960 MHz
P1dB: 24dBm
High Linearity/ACP Performance
Robust 2000V ESD, Class 2
SOT-89 package
MSL 1 moisture rating
P1dB Gain
P1dB
Gain
P1dB
Gain
Applications
PA Driver Amplifier
IF Amplifier
Cellular, PCS, ISM, WLL, W-CDMA
U n its
M in .
T yp .
M ax.
880 MHz
S ym b o l
1960 MHz
P a ra m e te rs
2140 MHz
P
1dB
O u tp u t P o w e r a t 1 d B C o m p re s sio n
dBm
450 M H z
880 M H z
1960 M H z
2140 M H z
450 M H z
880 M H z
1960 M H z
2140 M H z
450 M H z
880 M H z
1960 M H z
2140 M H z
450 M H z
880 M H z
1960 M H z
2140 M H z
450 M H z
880 M H z
1960 M H z
2140 M H z
450 M H z
880 M H z
1960 M H z
2140 M H z
Vs = 8V
R b ia s = 2 0 O h m s
V d e v ic e = 5 .2 V
23
23
24
2 4 .5
2 4 .5
2 4 .5
25
23
17
17
1 .1
1 .4
1 .6
1 .3
4 .9
4 .5
4 .7
4 .2
2 4 .5
2 1 .5
S
21
S m a ll S ig n a l G a in
dBm
2 1 .5
1 5 .5
S
11
In p u t V S W R
2 .5
NF
N o is e F ig u re
dB
6
O IP
3
T h ird O rd e r In te rc e p t P o in t
(P o u t/to n e = + 1 1 d B m , T o n e s p a c in g = 1 M H z)
dBm
38
40
40
41
43
43
16
1 6 .3
1 5 .5
1 5 .6
ACP
C hannel Power
IS -9 5 a t 4 5 0 /8 8 0 /1 9 6 0 M H z, -5 5 d B c A C P
W C D M A a t 2 1 4 0 M H z, -5 0 d B c A C P
dBm
I
D
R
T H
, j-l
D e vic e C u rre n t
mA
@ 8 5 C (ju n c tio n - le a d )
Z
O
= 50 Ohm s
120
135
5 1 .3
150
Test
h e rm a l R e s is ta n c e
Conditions:
T
T
a
= 2 5 °C
°C /W
T e s t C o n d itio n s :
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-104625 Rev C