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SXB-4089 参数 Datasheet PDF下载

SXB-4089图片预览
型号: SXB-4089
PDF下载: 下载PDF文件 查看货源
内容描述: 400-2500兆赫1/4 W¯¯中等功率的InGaP /砷化镓HBT放大器,有源偏置 [400-2500 MHz 1/4 W Medium Power InGaP/GaAs HBT Amplifier with Active Bias]
分类和应用: 放大器射频微波
文件页数/大小: 8 页 / 179 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Product Description
Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs
Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost, surface-
mountable plastic package.
These amplifiers are specially designed for use as driver devices for
infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-
CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as well as digital
applications.
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS compliant
per EU Directive 2002/95. This package is also manufactured with green
molding compounds that contain no antimony trioxide nor halogenated fire
retardants.
SXB-4089
SXB-4089Z
Pb
RoHS Compliant
&
Green
Package
400-2500 MHz �½ W Medium Power
InGaP/GaAs HBT Amplifier with
Active Bias
Product Features
• On-chip Active Bias Control, Single 5V Supply
• High Output 3rd Order Intercept:
+45 dBm typ.
• High P1dB : +28 dBm typ.
• High Gain: +20 dB at 880 MHz
• Low Rth: 25
°
C/W typ.
• Robust 2000V ESD, Class 2
50
45
40
35
Typical IP3, P1dB, Gain
OIP3
P1dB
Gain
dBm
30
25
20
15
10
5
0
Applications
• W-CDMA, PCS, Cellular Systems
880 MHz
1960 MHz
Parameters
2140 MHz
Units
• Multi-Carrier Applications
Frequency
Min.
Typ.
Max.
Symbol
P
1dB
Output Power at 1 dB Compression
dBm
880 MHz
1960 MHz
2140 MHz
880 MHz
1960 MHz
2140 MHz
880 MHz
1960 MHz
2140 MHz
27.5
26
18
12.5
27.5
27.5
20
15
14
1.3:1
1.3:1
1.3:1
41.5
42.5
43.5
44.5
44.5
5.6
3.3
3.3
4.75
235
5
265
25.3
5.25
295
22
15.5
2.0:1
S
21
Small Signal Gain
dBm
S
11
Input VSW R
OIP3
Output Third Order Intercept Point
(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
dBm
880 MHz
1960 MHz
2140 MHz
880 MHz
1960 MHz
2140 MHz
NF
V
CC
I
D
R
TH
, j-l
Test Conditions:
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction - lead)
T
a
= 25°C
Z
O
= 50 Ohms
Measured in Application Circuit
dB
V
mA
°C/W
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103215 Rev E