AS165-59LF 参数 Datasheet PDF下载

DATA SHEET

AS165-59, AS165-59LF: GaAs IC High-Isolation

SPST Switch Positive Control 0.7–2.5 GHz

Features

Single positive control voltage (0, 5 V)

●

Base station synthesizer switch

●

High isolation (45 dB @ 0.9, 1.9 GHz)

●

J port nonreflective

1

●

Miniature low-cost MSOP-8 plastic package

●

Available lead (Pb)-free and RoHS-compliant MSL-1 @ 260 °C

per JEDEC J-STD-020

●

Pin Out

GND

V

S

J

1

C

BL

GND

4

C

BL

2

3

50

7

GND

V

1

GND

J

2

1

8

6

5

DC blocking capacitors must be supplied externally.

C

BL

= 47 pF for operation >500 MHz.

Description

The AS165-59 SPST IC FET switch is absorptive on the input. The

switch features high isolation and low insertion loss. Ideal

building block for base station applications where synthesizer

isolation is critical. Use in conjunction with the AS164-80 SPDT

switch to meet GSM synthesizer switch isolation requirements.

NEW

Skyworks offers lead (Pb)-free, RoHS (Restriction of

Hazardous Substances)-compliant packaging.

Electrical Specifications at 25 °C (0, 5 V)

Parameter

(1)

Insertion loss

(2)

Frequency

0.7–1.0 GHz

1.0–2.0 GHz

2.0–2.5 GHz

0.7–2.0 GHz

2.0–2.5 GHz

0.7–1.8 GHz

1.8–2.5 GHz

39

30

Min.

Typ.

0.7

0.8

1.2

45

38

1.7:1

1.5:1

1.9:1

1.8:1

Max.

0.9

1.1

1.4

Unit

dB

dB

dB

dB

dB

Isolation

VSWR

(3)

1. All measurements made in a 50

Ω

system, unless otherwise specified.

2. Insertion loss changes by 0.003 dB/°C.

3. Insertion loss state and J

1

port.

Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com

200172 Rev. C • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • December 16, 2005

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