DATA SHEET
DSG9500-000: Planar Beam Lead PIN Diode
Applications
●
Designed for switching applications
Features
Low capacitance
●
Low resistance
●
Fast switching
●
Oxide-nitride passivated
●
Durable construction
●
High voltage
●
Description
The DSG9500-000 is designed for low resistance, low capaci-
tance and fast switching time. The oxide-nitride passivation
layers provide reliable operation and stable junction parameters
that provide complete sealing of the junction permitting use in
assemblies with some degree of moisture sealing.
The DSG9500-000 is ideal for microstrip or stripline circuits and
for circuits requiring high isolation from a series mounted diode
such as broad band multi-throw switches, phase shifters, lim-
iters, attenuators and modulators.
Absolute Maximum Ratings
Characteristic
Operating temperature
Storage temperature
Power dissipation (derate
linearly to zero @ 175 °C)
Typical lead strength
Value
-65 °C to +150 °C
-65 °C to +200 °C
250 mW
8 grams pull
Performance is guaranteed only under the conditions listed in the specifications table and is
not guaranteed under the full range(s) described by the Absolute Maximum specifications.
Exceeding any of the absolute maximum/minimum specifications may result in permanent
damage to the device and will void the warranty.
CAUTION:
Although this device is designed to be as robust as
possible, Electrostatic Discharge (ESD) can damage
this device. This device must be protected at all times
from ESD. Static charges may easily produce poten-
tials of several kilovolts on the human body or
equipment, which can discharge without detection.
Industry-standard ESD precautions must be employed
at all times.
Low Capacitance Planar Beam Lead Diode
Part
Number
DSG9500–000
Breakdown
Voltage
@ 10
µ
A
(V)
Min.
200
Capacitance
Total @ 50 V,
1 MHz
(pF)
Max.
0.02
Series Resistance
(From Ins. Loss
@ 3 GHz, 50 mA)
(1)
Ω
(Ω)
Max.
4.0
Minority Carrier
Lifetime
I
F
= 10 mA,
I
R
= 6 mA (ns)
Typ.
250
25
169-001
RF Switching
Time
T
S
(ns)
(2)
Outline
Drawing
Number
1. Total capacitance calculated from isolation at 9 GHz zero bias. Series resistance and capacitance are measured at microwave frequencies on a sample basis from each lot.
All diodes are characterized for capacitance at –50 V, 1 MHz, and series resistance at 1 KHz, 50 mA, measurements which correlate well with microwave measurements.
2. T
S
measured from RF transition, 90% to 10%, in series configuration.
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
200137 Rev. A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • February 7, 2005
1
SKYWORKS [ SKYWORKS SOLUTIONS INC. ]
