RM009
Power Amplifier Module for Dual-band GSM900 DCS1800
The RM009 is a dual-band Power Amplifier Module (PAM) designed in a compact
Distinguishing Features
form factor for Class 4 GSM900 and Class 1 DCS1800 cellular handsets.
• High efficiency
The module consists a GSM900 PA block and a DCS1800 PA block, matching
circuitry for 50
Ω
input and output impedances, and bias control circuitry. Two
separate Heterojunction Bipolar Transistor (HBT) PA blocks are fabricated on a
single Gallium Arsenide (GaAs) die. One PA block operates in the GSM900 band
and the other supports the DCS1800 band. The PAM is optimized for three-cell
operation with both PAs sharing common power supply pins to distribute
current. A custom CMOS integrated circuit contains a current amplifier that
minimizes the required power control current (I
APC
) to 60
µA,
typical.
•
•
•
•
GSM 54%
DCS 45%
Input/output matching
50
Ω
internal
Small outline
9.1 mm x 11.6 mm
Low profile
1.50 mm ±10%
Low APC current
60
µA
RF input and output ports are internally matched to 50
Ω
to reduce the number of
Applications
external components for a dual-band design. Switching circuitry receives the
band select signal on the band select pin (BS) to switch between GSM (logic 0)
• Class 4 GSM900 and Class 1
and DCS (logic 1). Analog Power Control (APC) controls the output power of
DCS1800 dual-band cellular
handsets
each PA selected by the band select signal. The extremely low leakage current
(2
µA,
typical) of the RM009 dual-band module maximizes handset standby time.
The functional block diagram shows the relationship of the dual PAs and the
CMOS device in the RM009.
Functional Block Diagram
DCS IN
Match
Match
DCS OUT
Power Control
Band Select
CMOS
Bias
Controller
HBT
GSM IN
Match
Match
GSM OUT
Data Sheet
Skyworks Solutions, Inc. Proprietary
© 1999–2002, Skyworks Solutions, Inc., All Rights Reserved.
101258B
July 26, 2002