BM6112FV-C is a gate driver with isolation voltage of 3750Vrms, I/O delay time of 150ns, and incorporates fault signal output function, ready signal output function, under voltage lockout (UVLO) function, short circuit protection (SCP) function, active miller clamping function, output state feedback function and temperature monitor function.For sale of this product, please contact the specifications in our sales office. Currently, we don't sell this on the internet distributors now.
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 1.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
