CXD1199AQ
Electrical Characteristics
DC characteristics
(VDD=5 V±10 %, VSS=0 V, Topr=–20 to 75 °C)
Item
Symbol
VIH1
Conditions
Min.
2.2
Typ.
Max.
Unit
V
1
TTL input level pin
High level input voltage
1
TTL input level pin
VIL1
VIH2
0.8
V
V
Low level input voltage
2
CMOS input level pin
0.7 VDD
0.8 VDD
High level input voltage
2
CMOS input level pin
VIL2
0.3 VDD
0.2 VDD
V
Low level input voltage
3
3
3
CMOS Schmitt input level pin
High level input voltage
VIH4
V
CMOS Schmitt input level pin
Low level input voltage
VIL4
V
CMOS Schmitt input level pin
Input voltage hysteresis
VIH4–VIL4
VIH5
0.6
V
4
TTL Schmitt input level pin
2.2 V
V
High level input voltage
4
TTL Schmitt input level pin
VIL5
0.8 V
V
Low level input voltage
4
TTL Schmitt input level pin
VIH5–VIL4
IIL3
0.4
V
Input voltage hysteresis
Bidirectional pin with pull-up resistance
5 Input current
VIN=0 V
–90
–200
–100
–440
–240
µA
µA
6
Input pin with pull-up resistance
IIL4
VIN=0 V
–40
Input current
7
High level output voltage
VOH1
VOL1
Iη
IOH=–2 mA
IOL=4 mA
VDD–0.8
V
V
7
Low level output voltage
0.4
10
8
Input leakage current
VIN=VSS or VDD
High-impedance
state
–10
–40
µA
9
Output leakage current
IOZ
40
µA
Oscillation cell 10 High level input voltage
Oscillation cell Low level input voltage
Oscillation cell Logic threshold value
Oscillation cell Feedback resistance value
Oscillation cell High level output voltage
Oscillation cell Low level output voltage
VIH4
VIL4
0.7 VDD
V
V
V
Ω
V
V
0.3 VDD
2.5 M
LVTH
RFB
0.5 VDD
1 M
VIN=VSS or VDD
IOH=–3 mA
IOL=3 mA
250 K
VOH2
VOL2
0.5 VDD
0.5 VDD
—6—
SONY [ SONY CORPORATION ]
