CXK581000ATM/AYM/AM/AP
Description
The CXK581000ATM/AYM/AM/AP is a high speed
CMOS static RAM organized as 131072-words by
8 bits.
A polysilicon TFT cell technology realized extremely low
stand- by current and higher data retention stability.
Special feature are low power consumption, high
speed and broad package line-up.
The CXK581000ATM/AYM/AM/AP ia a suitable
RAM for portable equipment with battery back up.
Features
•
Fast access time:
CXK581000ATM/AYM/AM/AP
-55LL/55SL
(Access time)
55ns (Max.)
CXK581000AM
32 pin SOP (Plastic)
CXK581000ATM
32 pin TSOP (Plastic)
-55LL/70LL/10LL
-55SL/70SL/10SL
131072-word
×
8-bit High Speed CMOS Static RAM
For the availability of this product, please contact the sales office.
CXK581000AYM
32 pin TSOP (Plastic)
CXK581000AP
32 pin DIP (Plastic)
•
•
•
•
•
•
•
•
-70LL/70SL
70ns (Max.)
-10LL/10SL
100ns (Max.)
Low standby current:
CXK581000ATM/AYM/AM/AP
-55LL/70LL/10LL
20µA (Max.)
-55SL/70SL/10SL
12µA (Max.)
Low data retention current
CXK581000ATM/AYM/AM/AP
-55LL/70LL/10LL
12µA (Max.)
-55SL/70SL/10SL
4µA (Max.)
Single +5V supply: +5V ±10%
Low voltage data retention: 2.0V (Min.)
Broad package line-up
CXK581000ATM/AYM
8mm
×
20mm 32 pin TSOP package
CXK581000AM
525mil 32 pin SOP package
CXK581000AP
600mil 32 pin DIP package
Block Diagram
A10
A11
A9
A8
A13
A15
A16
A14
A12
A7
V
CC
Buffer
Row
Decoder
Memory
Matrix
1024
×
1024
GND
A6
A5
A4
A3
A2
A1
A0
Buffer
I/O Gate
Column
Decoder
OE
Functions
131072-word
×
8-bit static RAM
Structure
Silicon gate CMOS IC
Buffer
WE
I/O Buffer
CE1
CE2
I/O 1
I/O 8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E92756D53-PP
SONY [ SONY CORPORATION ]
