CXK582000TM/YM/M
-85LL/10LL
262144-word
×
8-bit High Speed CMOS Static RAM
Description
The CXK582000TM/YM/M is a high speed CMOS
static RAM organized as 262144-words by 8 bits.
A
polysilicon
TFT
cell
technology
realized
extremely low stand-by current and higher data
retention stability.
Special feature are low power consumption and
high speed and board package line-up.
The CXK582000TM/YM/M is a suitable RAM for
portable equipment with battery back up.
Features
•
Fast access time
-85LL
-10LL
•
•
•
•
•
(Access time)
85ns (Max.)
100ns (Max.)
CXK582000M
32 pin SOP (PIastic)
CXK582000TM
32 pin TSOP (PIastic)
CXK582000YM
32 pin TSOP (PIastic)
Preliminary
For the availability of this product, please contact the sales office.
Low standby current
40µA (Max.)
Low data retention current
24µA (Max.)
Single +5V supply: 4.5V to 5.5V.
Low voltage date retention : 2.0V (Min.)
Broad package line-up
CXK582000TM/YM
8mm
×
20mm 32 pin
TSOP Package
CXK582000M
525mil 32 pin
SOP Package
Block Diagram
A10
A11
A9
A8
A13
A15
A17
A16
A14
A12
A7
Buffer
Row
Decoder
Memory
Matrix
2048
×
1024
V
CC
GND
Function
262144 word x 8 bit static RAM
Structure
Silicon gate CMOS IC
A6
A5
A4
A3
A2
A1
A0
OE
WE
CE1
CE2
Buffer
I /O Gate
Column
Decoder
Buffer
I /O Buffer
I/O1 I/O8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E94234-ST
SONY [ SONY CORPORATION ]
