CXK591000TM/YM/M
-55LL/70LL/10LL
131,072-word
×
9-bit High Speed CMOS Static RAM
For the availability of this product, please contact the sales office.
Description
The CXK591000TM/YM/M is a high speed CMOS
static RAM organized as 131,072-words by 9 bits.
A
polysilicon
TFT
cell
technology
realized
extremely low stand-by current and higher data
retention stability.
Special feature are low power consumption and
high speed.
The CXK591000TM/YM/M is a suitable RAM for
portable equipment with battery back up and parity
bit.
Features
•
Fast access time
CXK591000TM/YM/M
(Access time)
CXK591000M
32 pin SOP (PIastic)
CXK591000TM
32 pin TSOP (PIastic)
CXK591000YM
32 pin TSOP (PIastic)
•
•
•
•
•
-55LL
55ns (Max.)
-70LL
70ns (Max.)
-10LL
100ns (Max.)
Low standby current
CXK591000TM/YM/M
-55LL/70LL/10LL
24µA (Max.)
Low data retention current
CXK591000TM/YM/M
-55LL/70LL/10LL
14µA (Max.)
Single +5V supply: 5V ± 10%.
Low voltage date retention: 2.0V (Min.)
Broad package line-up
CXK591000TM/YM
8mm
×
20mm 32 pin TSOP Package
CXK591000M
525mil 32 pin SOP
Package
Block Diagram
A10
A11
A9
A8
A13
A15
A16
A14
A12
A7
Buffer
Row
Decoder
Memory
Matrix
1024
×
1152
V
CC
GND
A6
A5
A4
A3
A2
A1
A0
OE
WE
CE1
CE2
Buffer
I /O Gate
Column
Decoder
Function
131072 word
×
9 bit static RAM
Structure
Silicon gate CMOS IC
Buffer
I /O Buffer
I/O1 I/O9
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E93X06-PS
SONY [ SONY CORPORATION ]
