CXK5T16100TM
-12LLX
65536-word
×
16-bit High Speed CMOS Static RAM
Description
The CXK5T16100TM is a general purpose high
speed CMOS static RAM organized as 65536-
words by 16-bits.
Special feature are low power consumption and
high speed.
The CXK5T16100TM is a suitable RAM for portable
equipment with battery back up.
Features
•
Extended operating temperature range: –25 to +85°C
•
Wide supply voltage range operation: 2.7 to 3.6V
•
Fast access time:
3.0V operation
3.3V operation
(Access time)
120ns (max.)
100ns (max.)
44 pin TSOP (PIastic)
Preliminary
For the availability of this product, please contact the sales office.
Block Diagram
A1
A0
A7
A6
A5
A4
A3
A2
A15
A14
GND
Buffer
Vcc
Memory
Matrix
512
×
1024
Row
Decoder
Memory
Matrix
512
×
1024
Vcc
•
Low power consumption operation:
Standby / DC operation
1.6µW (typ.) / 3.3mW (typ.)
100µW (max.) / 11mW (max.)
Fully static memory ··· No clock or timing strobe
required
Equal access and cycle time
Common data input and output: three state output
Directly LVTTL compatible: All inputs and outputs
Low voltage data retention: 2.0V (min.)
400mil 44pin TSOP (type
II)
package
GND
•
•
•
•
•
•
CE
UB
LB
OE
WE
Control
I/O Gate
Column
Decoder
Pre
Decoder
I/O Gate
Column
Decoder
A13
A12
A11
A10
A9
A8
I/O Buffer
I/O Buffer
Buffer
I/O1
I/O8
I/O9 I/O16
Function
65536-word x 16-bit static RAM
Structure
Silicon gate CMOS IC
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
PE96405-ST
SONY [ SONY CORPORATION ]
