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CXK77B1810AGB-5 参数 Datasheet PDF下载

CXK77B1810AGB-5图片预览
型号: CXK77B1810AGB-5
PDF下载: 下载PDF文件 查看货源
内容描述: 高速双CMOS同步静态RAM [High Speed Bi-CMOS Synchronous Static RAM]
分类和应用:
文件页数/大小: 4 页 / 85 K
品牌: SONY [ SONY CORPORATION ]
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CXK77B1810AGB
-5/6
High Speed Bi-CMOS Synchronous Static RAM
Description
The CXK77B1810AGB-5/6 is a high speed 1M bit
Bi-CMOS synchronous static RAM organized as
65536 words by 18 bits. This SRAM integrates input
registers, high speed SRAM and write buffer onto a
single monolithic IC and features the delayed write
system to reduce the dead cycles.
Features
Fast cycle time
CXK77B1810AGB-5
-6
(Cycle)
5ns
6ns
(Frequency)
200MHz
167MHz
Preliminary
For the availability of this product, please contact the sales office.
119 pin BGA (Plastic)
Inputs and outputs are GTL/HSTL compatible
Controlled Impedance Driver
Single 3.3V power supply: 3.3V±0.15V
Byte-write possible
OE asynchronization
JTAG test circuit
Package 119TBGA
4 kinds of synchronous operation mode
Register-Register mode (R-R mode)
Register-Flow Thru mode (R-F mode)
Register-Latch mode (R-L mode)
Dual clock mode (D-C mode)
Function
65536 word x 18bit High Speed Bi-CMOS Synchronous SRAM
Structure
Silicon gate Bi-CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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PE96811