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AM29DL324GT70EI 参数 Datasheet PDF下载

AM29DL324GT70EI图片预览
型号: AM29DL324GT70EI
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4米×8位/ 2的M× 16位) CMOS 3.0伏只,同时操作闪存 [32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 58 页 / 1293 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
Table 15. Write Operation Status  
DQ7  
DQ5  
DQ2  
Status  
(Note 2)  
DQ6  
(Note 1)  
DQ3  
N/A  
1
(Note 2)  
RY/BY#  
Embedded Program Algorithm  
Embedded Erase Algorithm  
Erase  
Erase-Suspend-  
Read  
DQ7#  
0
Toggle  
Toggle  
0
0
No toggle  
Toggle  
0
0
Standard  
Mode  
1
No toggle  
0
N/A  
Toggle  
1
Suspended Sector  
Erase  
Suspend  
Mode  
Non-Erase  
Suspended Sector  
Data  
Data  
Data  
0
Data  
N/A  
Data  
N/A  
1
0
Erase-Suspend-Program  
DQ7#  
Toggle  
Notes:  
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.  
Refer to the section on DQ5 for more information.  
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further  
details.  
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm  
is in progress. The device outputs array data if the system addresses a non-busy bank.  
December 4, 2006 25686B10  
Am29DL32xG  
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