DATA SHEET
Am29F010B
1 Megabit (128 K x 8-bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■
Single power supply operation
— 5.0 V ± 10% for read, erase, and program operations
— Simplifies system-level power requirements
■
Manufactured on 0.32 µm process technology
— Compatible with Am29F010 and Am29F010A
device
■
High performance
— 45 ns maximum access time
■
Low power consumption
— 12 mA typical active read current
— 30 mA typical program/erase current
— <1 µA typical standby current
■
Flexible sector architecture
— Eight 16 Kbyte sectors
— Any combination of sectors can be erased
— Supports full chip erase
■
Sector protection
— Hardware-based feature that disables/re-
enables program and erase operations in any
combination of sectors
— Sector protection/unprotection can be
implemented using standard PROM
programming equipment
■
Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
— Embedded Program algorithm automatically
programs and verifies data at specified address
■
Erase Suspend/Resume
— Supports reading data from a sector not
being erased
■
Minimum 1 million erase cycles guaranteed per
sector
■
20-year data retention at 125°C
— Reliable operation for the life of the system
■
Package options
— 32-pin PLCC
— 32-pin TSOP
— 32-pin PDIP
■
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
■
Data# Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication #
Am29F010B_00
Revision:
C
Amendment:
7
Issue Date:
October 31, 2006
SPANSION [ SPANSION ]
