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AM29LV320DT90WMI 参数 Datasheet PDF下载

AM29LV320DT90WMI图片预览
型号: AM29LV320DT90WMI
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4米×8位/ 2的M× 16位) CMOS 3.0伏只,引导扇区闪存 [32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 55 页 / 887 K
品牌: SPANSION [ SPANSION ]
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Table 9.
Addresses
Addresses
(Word Mode) (Byte Mode)
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
20h
22h
24h
26h
28h
2Ah
2Ch
2Eh
30h
32h
34h
CFI Query Identification String
Description
Query Unique ASCII string “QRY”
Data
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
Table 10.
Addresses
Addresses
(Word Mode) (Byte Mode)
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
36h
38h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
System Interface String
Description
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
V
PP
Min. voltage (00h = no V
PP
pin present)
V
PP
Max. voltage (00h = no V
PP
pin present)
Typical timeout per single byte/word write 2
N
µs
Typical timeout for Min. size buffer write 2
N
Data
0027h
0036h
0000h
0000h
0004h
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
µ
s (00h = not supported)
Typical timeout per individual block erase 2
N
ms
Typical timeout for full chip erase 2
N
ms (00h = not supported)
Max. timeout for byte/word write 2
N
times typical
Max. timeout for buffer write 2
N
times typical
Max. timeout per individual block erase 2
N
times typical
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
22
Am29LV320D
November 15, 2004