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MB84VD21194EM-70PBS 参数 Datasheet PDF下载

MB84VD21194EM-70PBS图片预览
型号: MB84VD21194EM-70PBS
PDF下载: 下载PDF文件 查看货源
内容描述: 堆叠MCP (多芯片封装)闪存和CMOS SRAM [Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS]
分类和应用: 闪存存储内存集成电路静态存储器
文件页数/大小: 52 页 / 862 K
品牌: SPANSION [ SPANSION ]
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FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-50307-1E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
16M (×8/×16) FLASH MEMORY &
4M (×8/×16) STATIC RAM
MB84VD2118XEM
-70
/MB84VD2119XEM
-70
s
FEATURES
• Power Supply Voltage of 2.7 V to 3.3 V
High Performance
70 ns maximum access time (Flash)
70 ns maximum access time (SRAM)
Operating Temperature
–40
°
C to +85
°
C
• Package 56-ball FBGA
(Continued)
s
PRODUCT LINE-UP
Part No.
Supply Voltage(V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
MB84VD2118XEM/MB84VD2119XEM
V
CC
f*= 3.0 V
70
70
30
+0.3 V
–0.3 V
V
CC
s*= 3.0 V
+0.3V
–0.3 V
70
70
35
*: Both V
CC
f and V
CC
s must be in recommended operation range when either part is being accessed.
s
PACKAGE
56-ball plastic FBGA
(BGA-56P-M02)