欢迎访问ic37.com |
会员登录 免费注册
发布采购

MBM29DL164BE-70TN 参数 Datasheet PDF下载

MBM29DL164BE-70TN图片预览
型号: MBM29DL164BE-70TN
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存的CMOS 16M ( 2M ×8 / 1M ×16 )位双操作 [FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 76 页 / 1048 K
品牌: SPANSION [ SPANSION ]
 浏览型号MBM29DL164BE-70TN的Datasheet PDF文件第4页浏览型号MBM29DL164BE-70TN的Datasheet PDF文件第5页浏览型号MBM29DL164BE-70TN的Datasheet PDF文件第6页浏览型号MBM29DL164BE-70TN的Datasheet PDF文件第7页浏览型号MBM29DL164BE-70TN的Datasheet PDF文件第9页浏览型号MBM29DL164BE-70TN的Datasheet PDF文件第10页浏览型号MBM29DL164BE-70TN的Datasheet PDF文件第11页浏览型号MBM29DL164BE-70TN的Datasheet PDF文件第12页  
MBM29DL16XTE/BE
70/90
s
DEVICE BUS OPERATION
MBM29DL16XTE/BE User Bus Operations Table (BYTE = V
IH
)
Operation
Auto-Select Manufacturer Code*
1
Auto-Select Device Code*
1
Read*
3
Standby
Output Disable
Write (Program/Erase)
Enable Sector Group Protection*
2,
*
4
Verify Sector Group Protection*
2,
*
4
Temporary Sector Group Unprotection*
5
Reset (Hardware) / Standby
Boot Block Sector Write Protection
Legend:
L = V
IL
, H = V
IH
, X = V
IL
or V
IH
,
CE OE WE
L
L
L
H
L
L
L
L
X
X
X
L
L
L
X
H
H
V
ID
L
X
X
X
H
X
X
X
H
H
H
X
H
L
A
0
L
H
A
0
X
X
A
0
L
L
X
X
X
A
1
L
L
A
1
X
X
A
1
H
H
X
X
X
A
6
L
L
A
6
X
X
A
6
L
L
X
X
X
A
9
V
ID
V
ID
A
9
X
X
A
9
V
ID
V
ID
X
X
X
DQ
15
to DQ
0
RESET WP/ACC
Code
Code
D
OUT
High-Z
High-Z
D
IN
X
Code
X
High-Z
X
H
H
H
H
H
H
H
H
V
ID
L
X
X
X
X
X
X
X
X
X
X
X
L
= Pulse input. See
sDC
CHARACTERISTICS for voltage levels.
*1: Manufacturer and device codes are accessed via a command register write sequence. See “MBM29DL16XTE/
BE Command Definitions Table”.
*2: Refer to “Sector Group Protection” in
sFUNCTIONAL
DESCRIPTION.
*3: WE can be V
IL
if OE is V
IL
, OE at V
IH
initiates the write operations.
*4: V
CC
=
+2.7
V to
+3.6
V
*5: Also used for the extended sector group protection.
MBM29DL16XTE/BE User Bus Operations Table (BYTE = V
IL
)
Operation
Auto-Select Manufacturer Code*
1
Auto-Select Device Code*
1
Read*
3
Standby
Output Disable
Write (Program/Erase)
Enable Sector Group Protection*
2,
*
4
Verify Sector Group Protection*
2,
*
4
Temporary Sector Group Unprotection*
5
Reset (Hardware) / Standby
Boot Block Sector Write Protection
Legend:
L = V
IL
, H = V
IH
, X = V
IL
or V
IH
,
CE
OE WE DQ
15
/
A
-1
A
0
A
1
A
6
A
9
DQ
7
to DQ
0
RESET WP/ACC
L
L
L
H
L
L
L
L
X
X
X
L
L
L
X
H
H
V
ID
L
X
X
X
H
H
H
X
H
L
L
L
A
-1
X
X
A
-1
L
L
H
A
0
X
X
A
0
L
L
X
X
X
L
L
A
1
X
X
A
1
H
H
X
X
X
L
L
A
6
X
X
A
6
L
L
X
X
X
V
ID
V
ID
A
9
X
X
A
9
V
ID
V
ID
X
X
X
Code
Code
D
OUT
High-Z
High-Z
D
IN
X
Code
X
High-Z
X
H
H
H
H
H
H
H
H
V
ID
L
X
X
X
X
X
X
X
X
X
X
X
L
H
X
X
X
L
X
X
X
= Pulse input. See
sDC
CHARACTERISTICS for voltage levels.
*1: Manufacturer and device codes are accessed via a command register write sequence. See “MBM29DL16XTE/
BE Command Definitions Table”.
*2: Refer to “Sector Group Protection” in
sFUNCTIONAL
DESCRIPTION.
*3: WE can be V
IL
if OE is V
IL
, OE at V
IH
initiates the write operations.
*4: V
CC
=
+2.7
V to
+3.6
V
*5: Also used for the extended sector group protection.
8