FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20881-7E
FLASH MEMORY
CMOS
32 M (4 M
×
8/2 M
×
16) BIT Dual Operation
MBM29DL32XTE/BE
80/90
s
DESCRIPTION
The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or
2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system
3.0 V V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase operations. The devices can also
be reprogrammed in standard EPROM programmers.
MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which are considered to be two separate
memory arrays for operations. It is the Fujitsu’s standard 3 V only Flash memories, with the additional capability
of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either
a program or an erase) operation is simultaneously taking place on the other bank.
(Continued)
s
PRODUCT LINE UP
Part No.
Power Supply Voltage V
CC
(V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
MBM29DL32XTE/BE
80
3.3
+0.3
−0.3
90
3.0
+0.6
−0.3
80
80
30
90
90
35
s
PACKAGES
48-pin plastic TSOP (1)
Marking Side
48-pin plastic TSOP (1)
63-ball plastic FBGA
Marking Side
(FPT-48P-M19)
(FPT-48P-M20)
(BGA-63P-M01)
SPANSION [ SPANSION ]
