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MBM29DL324TE90TN 参数 Datasheet PDF下载

MBM29DL324TE90TN图片预览
型号: MBM29DL324TE90TN
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH存储器CMOS 32米(4 MX 8/2 MX 16 )位双操作 [FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation]
分类和应用: 存储
文件页数/大小: 84 页 / 1272 K
品牌: SPANSION [ SPANSION ]
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MBM29DL32XTE/BE80/90  
DEVICE BUS OPERATION  
MBM29DL32XTE/BE User Bus Operations (BYTE = VIH)  
DQ15 to  
DQ0  
Operation  
CE OE WE A0  
A1  
A6  
A9  
RESET WP/ACC  
Auto-Select Manufacturer Code*1  
Auto-Select Device Code*1  
Read*3  
L
L
L
H
L
L
L
L
X
X
X
L
L
H
H
H
X
H
L
L
H
A0  
X
X
A0  
L
L
L
L
L
VID  
VID  
A9  
X
Code  
Code  
DOUT  
High-Z  
High-Z  
DIN  
H
H
H
H
H
H
H
H
VID  
L
X
X
X
X
X
X
X
X
X
X
L
L
A1  
X
A6  
X
X
A6  
L
Standby  
X
H
H
VID  
L
Output Disable  
X
X
Write (Program/Erase)  
A1  
H
H
X
A9  
VID  
VID  
X
Enable Sector Group Protection*2, *4  
Verify Sector Group Protection*2, *4  
Temporary Sector Group Unprotection*5  
Reset (Hardware) /Standby  
Boot Block Sector Write Protection  
X
H
X
X
X
L
L
Code  
X
X
X
X
X
X
X
X
X
X
X
X
High-Z  
X
X
X
X
Legend : L = VIL, H = VIH, X = VIL or VIH,  
= Pulse input. See DC Characteristics for voltage levels.  
*1 : Manufacturer and device codes are accessed via a command register write sequence. See “MBM29DL32XTE/  
BE Command Definitions”.  
*2 : Refer to the section on Sector Group Protection.  
*3 : WE can be VIL if OE is VIL, OE at VIH initiates the write operations.  
*4 : VCC = 3.3 V ± 10%  
*5 : Also used for the extended sector group protection.  
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