MBM29F800TA-90PF 参数 Datasheet PDF下载

MBM29F800TA

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/MBM29F800BA

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The MBM29F800TA/BA is pin and command set compatible with JEDEC standard E

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PROMs. Commands are

written to the command register using standard microprocessor write timings. Register contents serve as input

to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally

latch addresses and data needed for the programming and erase operations. Reading data out of the devices

is similar to reading from12.0 V Flash or EPROM devices.

The MBM29F800TA/BA is programmed by executing the program command sequence. This will invoke the

Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margin. Typically, each sector can be programmed and verified in less than 0.5 seconds.

Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase

Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed

before executing the erase operation. During erase, the device automatically times the erase pulse widths and

verifies proper cell margin.

Any individual sector is typically erased and verified in 1.0 second (if already completely preprogrammed.).

The devices also features a sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. The MBM29F800TA/BA is erased when shipped from the factory.

The devices features single 5.0 V power supply operation for both read and write functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low V

CC

detector automatically

inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ

7

,

by the Toggle Bit feature on DQ

6

, or the RY/BY output pin. Once the end of a program or erase cycle has been

completed, the device internally resets to the read mode.

Fujitsu’s Flash technology combines years of EPROM and E

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PROM experience to produce the highest levels

of quality, reliability, and cost effectiveness. The MBM29F800TA/BA memory electrically erase the entire chip or

all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one

byte/word at a time using the EPROM programming mechanism of hot electron injection.

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