S25FL128P
128 Megabit CMOS 3.0 Volt Flash Memory
with 104-MHz SPI (Serial Peripheral Interface) Bus
Data Sheet
(Preliminary)
Distinctive Characteristics
Architectural Advantages
Single power supply operation
– Full voltage range: 2.7 to 3.6 V read and program operations
Process Technology
– Manufactured on 0.09 µm MirrorBit
®
process technology
Package Option
– Industry Standard Pinouts
– 16-pin SO package (300 mils)
– 8-Contact WSON Package (6 x 8 mm)
Memory Architecture
– 128Mb uniform 256 KB sector product
– 128Mb uniform 64 KB sector product
Program
– Page Program (up to 256 bytes) in 1.5 ms (typical)
– Faster program time in Accelerated Programming mode
(8.5 V–9.5 V on #WP/ACC) in 1.2 ms (typical)
Performance Characteristics
Speed
– 104 MHz clock rate (maximum)
Erase
2 s typical 256 KB sector erase time
0.5 s typical 64 KB sector erase time
128 s typical bulk erase time
Sector erase (SE) command (D8h) for 256 KB sectors; (20h or D8h)
for 64KB sectors
– Bulk erase command (C7h) for 256 KB sectors; (60h or C7h) for
64KB sectors
–
–
–
–
Power Saving Standby Mode
– Standby Mode 200 µA (max)
– Deep Power Down Mode 3 µA (typical)
Memory Protection Features
Memory Protection
– WP#/ACC pin works in conjunction with Status Register Bits to
protect specified memory areas
– 256 KB uniform sector product:
Status Register Block Protection bits (BP2, BP1, BP0) in status
register configure parts of memory as read-only.
– 64KB uniform sector product:
Status Register Block Protection bits (BP3, BP2, BP1, BP0) in
status register configure parts of memory as read-only
Cycling Endurance
– 100,000 cycles per sector typical
Data Retention
– 20 years typical
Device ID
– RDID (9Fh), READ_ID (90h) and RES (ABh) commands to read
manufacturer and device ID information
– RES command one-byte electronic signature for backward
compatibility
Software Features
– SPI Bus Compatible Serial Interface
Hardware Features
x8 Parallel Programming Mode (for 16-pin SO package only)
General Description
The S25FL128P is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists
of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory.
The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are
designed to be programmed in-system with the standard system 3.0 volt V
CC
supply.
The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device
supports Sector Erase and Bulk Erase commands.
Each device requires only a 3.0 volt power supply (2.7 V to 3.6 V) for both read and write functions. Internally
generated and regulated voltages are provided for the program operations. This device requires a high
voltage supply to WP#/ACC pin for the Accelerated Programming mode.
Publication Number
S25FL128P_00
Revision
04
Issue Date
July 2, 2007
This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qual-
ification has been completed, and that initial production has begun. Due to the phases of the manufacturing process that require maintaining efficiency and quality, this document
may be revised by subsequent versions or modifications due to changes in technical specifications.
SPANSION [ SPANSION ]
