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S29AL008D70TAI020 参数 Datasheet PDF下载

S29AL008D70TAI020图片预览
型号: S29AL008D70TAI020
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1一M× 8位/ 512的K× 16位) CMOS 3.0伏只引导扇区闪存 [8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 55 页 / 1519 K
品牌: SPANSION [ SPANSION ]
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D a t a
S h e e t
sector erase commands is always less than 50 µs. See also the
Sector Erase
Command Sequence, on page 23.
START
Read DQ7–DQ0
Note 1
Read DQ7–DQ0
Toggle Bit
= Toggle?
Yes
No
No
DQ5 = 1?
Yes
(Notes
1, 2)
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Notes:
1. Read toggle bit twice to determine whether or not it
is toggling. See text.
2. Recheck toggle bit because it may stop toggling as
DQ5 changes to
1.
See text.
Figure 6.
Toggle Bit Algorithm
After the sector erase command sequence is written, the system should read the
status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device accepted
the command sequence, and then read DQ3. If DQ3 is
1,
the internally controlled
erase cycle started; all further commands (other than Erase Suspend) are ig-
nored until the erase operation is complete. If DQ3 is
0,
the device accepts
June 16, 2005 S29AL008D_00A3
S29AL008D
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