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S29AL016M90TFIR10 参数 Datasheet PDF下载

S29AL016M90TFIR10图片预览
型号: S29AL016M90TFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ IMX 16位), 3.0伏只引导扇区闪存 [16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY]
分类和应用: 闪存
文件页数/大小: 59 页 / 2056 K
品牌: SPANSION [ SPANSION ]
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Revision Summary  
Revision A (January 30, 2004)  
Initial release.  
Revision A + 1 (February 20, 2004)  
Product Selector Guide  
Removed regulated voltage range for the Speed Option.  
Ordering Information  
Included explanations of the package markings for TSOP and BGA packages.  
Word/Byte Program Sequence  
Added guidance for programming the same address multiple times without inter-  
vening erases.  
Operating Ranges  
Removed reference to regulated voltage ranges.  
AC Characteristics (Read Options table)  
The timing specifications for t  
and t  
were tightened to 20 ns.  
EHQZ  
GHQZ  
Erase and Programming Performance table  
Added the byte programming time specification.  
Revision A + 2 (February 25, 2004)  
Product Selector Guide  
Added Tray and 13” Tape and Reel to the Packing Type.  
Removed “2” from end of package marking.  
Revision A + 3 (March 24, 2004)  
Table 7, “System Interface String”  
Changed description to RFU for 23h word/46h byte mode.  
Added additional information to description for 24h word/28h byte mode.  
Removed references to V in note.  
CC  
CMOS Compatible  
Updated the Min and Max for V and the Min for V  
IL  
IH.  
Corrected test conditions for I  
CC5.  
Figure 12, “Input Waveforms and Measurement Levels”  
Added V to figure.  
CC  
BYTE# Timings for Read Operations and BYTE# Timings for Write  
Operations  
Removed figures.  
Erase/Program Operations  
Updated t  
100 ns speed option to have 100 ns Min.  
BUSY  
Alternate CE# Controlled Erase/Program Operations  
Added t parameter to table.  
RH  
Connection Diagrams  
Deleted the Reverse TSOP diagram.  
April 21, 2004 S29AL016M_00A4  
S29AL016M  
58