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S29GL512P11TAI010 参数 Datasheet PDF下载

S29GL512P11TAI010图片预览
型号: S29GL512P11TAI010
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 71 页 / 1568 K
品牌: SPANSION [ SPANSION ]
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Data
Sheet
(Advan ce
Infor m a tio n)
Figure 7.1
Single Word Program
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Unlock Cycle 1
Unlock Cycle 2
Write Program Command:
Address 555h, Data A0h
Setup
Command
Program Data to Address:
PA, PD
Program Address (PA),
Program Data (PD)
Perform Polling Algorithm
(see Write Operation
Status
flowchart)
Polling
Status
= Busy?
No
Yes
Polling
Status
= Done?
No
Yes
Error condition
(Exceeded Timing Limits)
PASS. Device is in
read mode.
FAIL. Issue reset command
to return to read
array
mode.
20
S29GL-P MirrorBit
TM
Flash Family
S29GL-P_00_A3 November 21, 2006