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S29GL01GP12TFI020 参数 Datasheet PDF下载

S29GL01GP12TFI020图片预览
型号: S29GL01GP12TFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存存储
文件页数/大小: 71 页 / 1568 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( A d v a n c e I n f o r m a t i o n )  
12. Appendix  
This section contains information relating to software control or interfacing with the Flash device. For  
additional information and assistance regarding software, see Section 5. For the latest information, explore  
the Spansion web site at www.spansion.com.  
12.1 Command Definitions  
Writing specific address and data commands or sequences into the command register initiates device  
operations. Tables 12.112.4 define the valid register command sequences. Writing incorrect address and  
data values or writing them in the improper sequence can place the device in an unknown state. A reset  
command is then required to return the device to reading array data.  
Table 12.1 S29GL-P Memory Array Command Definitions, x16  
Bus Cycles (Notes 15)  
First  
Addr  
Second  
Third  
Fourth  
Fifth  
Addr  
Sixth  
Command (Notes)  
Data  
RD  
F0  
Addr  
Data  
Addr  
Data  
Addr  
Data  
Data  
Addr  
Data  
Read (6)  
Reset (7)  
1
1
4
4
4
RA  
XXX  
555  
555  
555  
Manufacturer ID  
AA  
AA  
AA  
2AA  
2AA  
2AA  
55  
55  
55  
555  
555  
555  
90  
90  
90  
X00  
X01  
01  
Device ID (8)  
227E  
(10)  
X0E  
(8)  
X0F  
(8)  
Sector Protect Verify (10)  
[SA]X02  
Secure Device Verify (11)  
4
555  
AA  
2AA  
55  
555  
90  
X03  
(11)  
CFI Query (12)  
1
4
3
1
3
3
2
2
2
2
6
6
1
1
3
4
55  
98  
AA  
AA  
29  
Program  
555  
555  
SA  
2AA  
2AA  
55  
55  
555  
SA  
A0  
25  
PA  
SA  
PD  
Write to Buffer  
WC  
WBL  
PD  
WBL  
PD  
Program Buffer to Flash (Confirm)  
Write-to-Buffer-Abort Reset (13)  
Enter  
555  
555  
XXX  
XXX  
XXX  
XXX  
555  
555  
XXX  
XXX  
555  
555  
AA  
AA  
A0  
80  
2AA  
2AA  
PA  
55  
55  
PD  
30  
10  
00  
55  
55  
555  
555  
F0  
20  
Program (14)  
Sector Erase (14)  
SA  
Chip Erase (14)  
80  
XXX  
XXX  
2AA  
2AA  
Reset (15)  
90  
Chip Erase  
AA  
AA  
B0  
30  
555  
555  
80  
80  
555  
555  
AA  
AA  
2AA  
2AA  
55  
55  
555  
SA  
10  
30  
Sector Erase  
Erase Suspend/Program Suspend (16)  
Erase Resume/Program Resume (17)  
Secured Silicon Sector Entry  
Secured Silicon Sector Exit (18)  
AA  
AA  
2AA  
2AA  
55  
55  
555  
555  
88  
90  
XX  
00  
Legend  
X = Don’t care  
RA = Address of the memory to be read.  
RD = Data read from location RA during read operation.  
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later.  
PD = Data to be programmed at location PA. Data latches on the rising edge of the WE# or CE# pulse, whichever happens first.  
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A  
–A16 uniquely select any sector.  
max  
WBL = Write Buffer Location. The address must be within the same write buffer page as PA.  
WC = Word Count is the number of write buffer locations to load minus 1.  
Notes  
1. See Table 7.1 on page 14 for description of bus operations.  
2. All values are in hexadecimal.  
3. All bus cycles are write cycles unless otherwise noted.  
4. Data bits DQ15-DQ8 are don’t cares for unlock and command cycles.  
5. Address bits A  
:A16 are don’t cares for unlock and command cycles, unless SA or PA required. (A  
is the Highest Address pin.).  
MAX  
MAX  
6. No unlock or command cycles required when reading array data.  
November 21, 2006 S29GL-P_00_A3  
S29GL-P MirrorBitTM Flash Family  
61