欢迎访问ic37.com |
会员登录 免费注册
发布采购

S29GL128P11FFI020 参数 Datasheet PDF下载

S29GL128P11FFI020图片预览
型号: S29GL128P11FFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 71 页 / 1568 K
品牌: SPANSION [ SPANSION ]
 浏览型号S29GL128P11FFI020的Datasheet PDF文件第40页浏览型号S29GL128P11FFI020的Datasheet PDF文件第41页浏览型号S29GL128P11FFI020的Datasheet PDF文件第42页浏览型号S29GL128P11FFI020的Datasheet PDF文件第43页浏览型号S29GL128P11FFI020的Datasheet PDF文件第45页浏览型号S29GL128P11FFI020的Datasheet PDF文件第46页浏览型号S29GL128P11FFI020的Datasheet PDF文件第47页浏览型号S29GL128P11FFI020的Datasheet PDF文件第48页  
D a t a S h e e t ( A d v a n c e I n f o r m a t i o n )  
Figure 8.3 Lock Register Program Algorithm  
Write Unlock Cycles:  
Address 555h, Data AAh  
Address 2AAh, Data 55h  
Unlock Cycle 1  
Unlock Cycle 2  
Write  
Enter Lock Register Command:  
Address 555h, Data 40h  
XXXh = Address dont care  
Program Lock Register Data  
Address XXXh, Data A0h  
Address XXXh*, Data PD  
Program Data (PD): See text for Lock Register definitions  
Caution: Lock register can only be progammed once.  
Wait 4 ms  
(Recommended)  
Perform Polling Algorithm  
(see Write Operation Status  
flowchart)  
Yes  
Done?  
No  
No  
DQ5 = 1?  
Error condition (Exceeded Timing Limits)  
Yes  
PASS. Write Lock Register  
Exit Command:  
FAIL. Write rest command  
to return to reading array.  
Address XXXh, Data 90h  
Address XXXh, Data 00h  
Device returns to reading array.  
42  
S29GL-P MirrorBitTM Flash Family  
S29GL-P_00_A3 November 21, 2006