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S29GL032A11FFIR40 参数 Datasheet PDF下载

S29GL032A11FFIR40图片预览
型号: S29GL032A11FFIR40
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位32MEGABIT 3.0 BOLT单页面模式闪存 [64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 88 页 / 1198 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e
I n f o r m a t i o n
bit programming, a modified programming method is required; please contact
your local Spansion representative.
Any bit in a write buffer address range
cannot be programmed from “0” back to a “1.”
Attempting to do so may
cause the device to set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate
the operation was successful. However, a succeeding read will show that the data
is still “0.” Only erase operations can convert a “0” to a “1.”
Accelerated Program
The device offers accelerated program operations through the WP#/ACC or ACC
pin depending on the particular product. When the system asserts V
HH
on the
WP#/ACC or ACC pin. The device uses the higher voltage on the WP#/ACC or ACC
pin to accelerate the operation.
Note that the
WP#/ACC
pin must not be at V
HH
for operations other than accelerated programming, or device damage may re-
sult. WP# has an internal pullup; when unconnected, WP# is at V
IH
.
illustrates the algorithm for the program operation. Refer to the Erase
and Program Operations–“AC
section for pa-
rameters, and
for timing diagrams.
January 28, 2005 S29GLxxxA_00_A2
S29GLxxxA MirrorBit™ Flash Family
47