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S29GL256M10TAIR10 参数 Datasheet PDF下载

S29GL256M10TAIR10图片预览
型号: S29GL256M10TAIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
Valid Combinations for  
Package  
Notes  
(1)  
TSOP Package  
R0  
R3  
R4  
R6  
R7  
TAI  
TFI  
TS048  
S29GL064M90  
S29GL064M10  
S29GL064M11  
TAI  
TFI  
R1  
R2  
TS056  
(1)  
TBI  
TCI  
R2  
R7  
FPT-48P-M19  
FPT-56P-M01  
TAI  
TDI  
R9  
The TSOP package marking appears as the first 16 characters of the OPN. For example,  
the package marking for OPN S29GL064M90TAIR10 is “S29GL064M90TAIR1.”  
Valid Combinations for  
Package  
Notes  
BGA Package  
R0  
BAI  
BFI  
R3  
R4  
R5  
FBE063  
LAA064  
S29GL064M90  
S29GL064M10  
S29GL064M11  
R1  
R2  
R3  
R4  
R5  
FAI  
FFI  
The BGA package marking appears as characters 4-16 of the OPN. For example, the pack-  
age marking for OPN S29GL064M90BAIR00 is “GL064M90BAIR0.”  
Valid Combinations  
Valid Combinations list configurations planned to be supported in volume for this  
device. Consult your local sales office to confirm availability of specific valid com-  
binations and to check on newly released combinations.  
Note:  
1. This package is recommended for new designs using TSOPs.  
April 30, 2004 S29GLxxxM_00A5  
S29GLxxxM MirrorBitTM Flash Family  
25