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S29GL064N90TFI020 参数 Datasheet PDF下载

S29GL064N90TFI020图片预览
型号: S29GL064N90TFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆, 32兆3.0伏只页面模式闪存设有110纳米的MirrorBit工艺技术 [64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 79 页 / 3123 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
8.4  
Standby Mode  
When the system is not reading or writing to the device, it can place the device in the standby mode. In this  
mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state,  
independent of the OE# input.  
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VIO 0.3 V.  
(Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within  
VIO 0.3 V, the device is in the standby mode, but the standby current is greater. The device requires  
standard access time (tCE) for read access when the device is in either of these standby modes, before it is  
ready to read data.  
If the device is deselected during erasure or programming, the device draws active current until the operation  
is completed.  
Refer to the DC Characteristics on page 62 for the standby current specification.  
8.5  
8.6  
Automatic Sleep Mode  
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables  
this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the  
CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are  
changed. While in sleep mode, output data is latched and always available to the system. Refer to the DC  
Characteristics on page 62 for the automatic sleep mode current specification.  
RESET#: Hardware Reset Pin  
The RESET# pin provides a hardware method of resetting the device to reading array data. When the  
RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in  
progress, Hi-Z all output pins, and ignores all read/write commands for the duration of the RESET# pulse.  
The device also resets the internal state machine to reading array data. The operation that was interrupted  
should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity.  
Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS 0.3 V, the device  
draws CMOS standby current (ICC5). If RESET# is held at VIL but not within VSS 0.3 V, the standby current is  
greater.  
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash  
memory, enabling the system to read the boot-up firmware from the Flash memory.  
Refer to the AC Characteristics tables for RESET# parameters and to Figure 15.4 on page 66 for the timing  
diagram.  
8.7  
Output Disable Mode  
When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high  
impedance state.  
November 16, 2007 S29GL-N_01_09  
S29GL-N MirrorBit® Flash Family  
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