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S29GL064N90TFI020 参数 Datasheet PDF下载

S29GL064N90TFI020图片预览
型号: S29GL064N90TFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆, 32兆3.0伏只页面模式闪存设有110纳米的MirrorBit工艺技术 [64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 79 页 / 3123 K
品牌: SPANSION [ SPANSION ]
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S29GL-N MirrorBit
®
Flash Family
S29GL064N, S29GL032N
64 Megabit, 32 Megabit
3.0 Volt-only Page Mode Flash Memory
Featuring 110 nm MirrorBit Process Technology
Data Sheet
Distinctive Characteristics
Architectural Advantages
Single power supply operation
Manufactured on 110 nm MirrorBit process technology
Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number,
accessible through a command sequence
– Programmed and locked at the factory or by the customer
Low power consumption
– 25 mA typical active read current
– 50 mA typical erase/program current
– 10 µA typical standby mode current
Package options
48-pin TSOP
56-pin TSOP
64-ball Fortified BGA
48-ball fine-pitch BGA
Flexible sector architecture
– 64Mb (uniform sector models): One hundred twenty-eight 32 Kword
(64 KB) sectors
– 64 Mb (boot sector models): One hundred twenty-seven 32 Kword
(64 KB) sectors + eight 4Kword (8KB) boot sectors
– 32 Mb (uniform sector models): Sixty-four 32Kword (64 KB) sectors
– 32 Mb (boot sector models): Sixty-three 32Kword (64 KB) sectors +
eight 4Kword (8KB) boot sectors
Software & Hardware Features
Software features
– Advanced Sector Protection: offers Persistent Sector Protection and
Password Sector Protection
– Program Suspend & Resume: read other sectors before
programming operation is completed
– Erase Suspend & Resume: read/program other sectors before an
erase operation is completed
– Data# polling & toggle bits provide status
– CFI (Common Flash Interface) compliant: allows host system to
identify and accommodate multiple flash devices
– Unlock Bypass Program command reduces overall multiple-word
programming time
Enhanced VersatileI/O
Control
– All input levels (address, control, and DQ input levels) and outputs
are determined by voltage on V
IO
input. V
IO
range is 1.65 to V
CC
Compatibility with JEDEC standards
– Provides pinout and software compatibility for single-power supply
flash, and superior inadvertent write protection
100,000 erase cycles typical per sector
20-year data retention typical
Hardware features
– WP#/ACC input accelerates programming time (when high voltage
is applied) for greater throughput during system production. Protects
first or last sector regardless of sector protection settings on uniform
sector models
– Hardware reset input (RESET#) resets device
– Ready/Busy# output (RY/BY#) detects program or erase cycle
completion
Performance Characteristics
High performance
90 ns access time
8-word/16-byte page read buffer
25 ns page read time
16-word/32-byte write buffer which reduces overall programming
time for multiple-word updates
Publication Number
S29GL-N_01
Revision
09
Issue Date
November 16, 2007