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S29GL064N90TFI020 参数 Datasheet PDF下载

S29GL064N90TFI020图片预览
型号: S29GL064N90TFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆, 32兆3.0伏只页面模式闪存设有110纳米的MirrorBit工艺技术 [64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 79 页 / 3123 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
10.3 Autoselect Command Sequence  
The autoselect command sequence allows the host system to read several identifier codes at specific  
addresses:  
A7:A0  
(x16)  
A6:A-1  
(x8)  
Identifier Code  
Manufacturer ID  
00h  
01h  
00h  
02h  
Device ID, Cycle 1  
Device ID, Cycle 2  
0Eh  
1Ch  
Device ID, Cycle 3  
0Fh  
1Eh  
Secured Silicon Sector Factory Protect  
Sector Protect Verify  
03h  
06h  
(SA)02h  
(SA)04h  
Note  
The device ID is read over three cycles. SA = Sector Address  
The autoselect command sequence is initiated by first writing on unlock cycle (two cycles). This is followed by  
a third write cycle that contains the autoselect command. The device then enters the autoselect mode. The  
system may read at any address any number of times without initiating another autoselect command  
sequence:  
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the  
device was previously in Erase Suspend).  
10.4 Enter/Exit Secured Silicon Sector Command Sequence  
The Secured Silicon Sector region provides a secured data area containing an 8-word/16-byte random  
Electronic Serial Number (ESN). The system can access the Secured Silicon Sector region by issuing the  
three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured  
Silicon Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence.  
The Exit Secured Silicon Sector command sequence returns the device to normal operation. Table 10.1  
on page 51 and Table 10.3 on page 53 show the address and data requirements for both command  
sequences. See also Secured Silicon Sector Flash Memory Region on page 35 for further information. Note  
that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is  
enabled.  
10.4.1  
Word Program Command Sequence  
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two  
unlock write cycles, followed by the program set-up command. The program address and data are written  
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further  
controls or timings. The device automatically provides internally generated program pulses and verifies the  
programmed cell margin. Table 10.1 on page 51 and Table 10.3 on page 53 show the address and data  
requirements for the word program command sequence, respectively.  
When the Embedded Program algorithm is complete, the device then returns to the read mode and  
addresses are no longer latched. The system can determine the status of the program operation by using  
DQ7 or DQ6. Refer to the Write Operation Status section for information on these status bits. Any commands  
written to the device during the Embedded Program Algorithm are ignored. Note that the Secured Silicon  
Sector, autoselect, and CFI functions are unavailable when a program operation is in progress. Note that a  
hardware reset immediately terminates the program operation. The program command sequence should be  
reinitiated once the device returns to the read mode, to ensure data integrity.  
Programming is allowed in any sequence of address locations and across sector boundaries. Programming  
to the same word address multiple times without intervening erases (incremental bit programming) requires a  
modified programming method. For such application requirements, please contact your local Spansion  
representative. Word programming is supported for backward compatibility with existing Flash driver software  
and for occasional writing of individual words. Use of write buffer programming (see below) is strongly  
recommended for general programming use when more than a few words are to be programmed. The  
effective word programming time using write buffer programming is approximately four times shorter than the  
single word programming time.  
42  
S29GL-N MirrorBit® Flash Family  
S29GL-N_01_09 November 16, 2007