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S29GL512N10FAI010 参数 Datasheet PDF下载

S29GL512N10FAI010图片预览
型号: S29GL512N10FAI010
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存内存集成电路
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a
S h e e t
Write “Write to Buffer”
command and
Sector Address
Write number of addresses
to program minus 1(WC)
and Sector Address
Part of “Write to Buffer”
Command Sequence
Write first address/data
Yes
WC = 0 ?
No
Abort Write to
Buffer Operation?
No
Yes
Write to buffer ABORTED.
Must write “Write-to-buffer
Abort Reset” command
sequence to return
to read mode.
Write to a different
sector address
(Note 1)
Write next address/data pair
WC = WC - 1
Write program buffer to
flash sector address
Notes:
1.
When Sector Address is specified, any address in
the selected sector is acceptable. However, when
loading Write-Buffer address locations with data,
all addresses must fall within the selected
Write-Buffer Page.
DQ7 may change simultaneously with DQ5.
Therefore, DQ7 should be verified.
If this flowchart location was reached because
DQ5=
1,
then the device FAILED. If this
flowchart location was reached because DQ1=
1,
then the Write to Buffer operation was
ABORTED. In either case, the proper reset
command must be written before the device can
begin another operation. If DQ1=1, write the
Write-Buffer-Programming-Abort-Reset
command. if DQ5=1, write the Reset command.
See
and
for command sequences required for
write buffer programming.
Read DQ15 - DQ0 at
Last Loaded Address
2.
3.
DQ7 = Data?
No
No
DQ1 = 1?
Yes
DQ5 = 1?
No
Yes
4.
Yes
Read DQ15 - DQ0 with
address = Last Loaded
Address
(Note 2)
DQ7 = Data?
No
Yes
(Note 3)
FAIL or ABORT
PASS
Figure 1.
Write Buffer Programming Operation
54
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006