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S29GL512N10FAI010 参数 Datasheet PDF下载

S29GL512N10FAI010图片预览
型号: S29GL512N10FAI010
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存内存集成电路
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
AC Characteristics  
Erase Command Sequence (last two cycles)  
Read Status Data  
VA  
tAS  
SA  
tWC  
VA  
Addresses  
CE#  
2AAh  
555h for chip erase  
tAH  
tCH  
OE#  
tWP  
WE#  
tWPH  
tWHWH2  
tCS  
tDS  
tDH  
In  
Data  
Complete  
55h  
30h  
Progress  
10 for Chip Erase  
tBUSY  
tRB  
RY/BY#  
VCC  
tVCS  
Notes:  
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status‚ on  
page 67).  
2. These waveforms are for the word mode.  
Figure 16. Chip/Sector Erase Operation Timings  
82  
S29GL-N MirrorBit™ Flash Family  
S29GL-N_00_B3 October 13, 2006