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S29GL512N11TFI010 参数 Datasheet PDF下载

S29GL512N11TFI010图片预览
型号: S29GL512N11TFI010
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Device Bus Operations  
This section describes the requirements and use of the device bus operations, which are ini-  
tiated through the internal command register. The command register itself does not occupy  
any addressable memory location. The register is a latch used to store the commands, along  
with the address and data information needed to execute the command. The contents of the  
register serve as inputs to the internal state machine. The state machine outputs dictate the  
function of the device. Table 1 lists the device bus operations, the inputs and control levels  
they require, and the resulting output. The following subsections describe each of these op-  
erations in further detail.  
Table 1. Device Bus Operations  
DQ8–DQ15  
Addresses  
(Note 1)  
DQ0–  
DQ7  
BYTE#  
= V  
BYTE#  
= V  
Operation  
CE#  
OE# WE# RESET# WP#/ACC  
IH  
IL  
Read  
L
L
H
L
H
H
X
AIN  
AIN  
DOUT  
DOUT  
(Note  
3)  
DQ8–DQ14  
= High-Z,  
DQ15 = A-1  
Write (Program/Erase)  
Accelerated Program  
Standby  
L
L
H
Note 2  
(Note 3)  
(Note  
3)  
H
X
L
H
VHH  
H
AIN  
X
(Note 3)  
High-Z  
VCC  
0.3 V  
±
VCC  
0.3 V  
±
X
High-Z  
High-Z  
Output Disable  
Reset  
L
H
X
H
X
H
L
X
X
X
X
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
X
Legend: L = Logic Low = V , H = Logic High = V , V = 11.5–12.5 V, V = 11.5–12.5V, X = Don’t Care, SA = Sector  
IL  
IH  
ID  
HH  
Address, A = Address In, D = Data In, D = Data Out  
IN  
IN  
OUT  
Notes:  
1. Addresses are AMax:A0 in word mode; A  
:A-1 in byte mode. Sector addresses are A  
:A16 in both modes.  
Max  
Max  
2. If WP# = V , the first or last sector group remains protected. If WP# = V , the first or last sector is protected or  
IL  
IH  
unprotected as determined by the method described in “Write Protect (WP#)”. All sectors are unprotected when  
shipped from the factory (The Secured Silicon Sector may be factory protected depending on version ordered.)  
3. D or D  
as required by command sequence, data polling, or sector protect algorithm (see Figure 2, Figure 4,  
OUT  
IN  
and Figure 5).  
Word/Byte Configuration  
The BYTE# pin controls whether the device data I/O pins operate in the byte or word config-  
uration. If the BYTE# pin is set at logic ‘1, the device is in word configuration, DQ0–DQ15 are  
active and controlled by CE# and OE#.  
If the BYTE# pin is set at logic ‘0, the device is in byte configuration, and only data I/O pins  
DQ0–DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8–DQ14 are  
tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function.  
VersatileIOTM (V ) Control  
IO  
The VersatileIOTM (VIO) control allows the host system to set the voltage levels that the de-  
vice generates and tolerates on CE# and DQ I/Os to the same voltage level that is asserted  
on VIO. See Ordering Information for VIO options on this device.  
For example, a VI/O of 1.65–3.6 volts allows for I/O at the 1.8 or 3 volt levels, driving and  
receiving signals to and from other 1.8 or 3 V devices on the same data bus.  
S29GL-N_00_B3 October 13, 2006  
S29GL-N MirrorBit™ Flash Family  
13