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S29GL256N10TFI010 参数 Datasheet PDF下载

S29GL256N10TFI010图片预览
型号: S29GL256N10TFI010
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a
S h e e t
The device reduces power consumption in the
standby mode
when it detects specific voltage
levels on CE# and RESET#, or when addresses have been stable for a specified period of time.
The
Secured Silicon Sector
provides a 128-word/256-byte area for code or data that can
be permanently protected. Once this sector is protected, no further changes within the sector
can occur.
The
Write Protect (WP#/ACC)
feature protects the first or last sector by asserting a logic
low on the WP# pin.
MirrorBit flash technology combines years of Flash memory manufacturing experience to pro-
duce the highest levels of quality, reliability and cost effectiveness. The device electrically
erases all bits within a sector simultaneously via hot-hole assisted erase. The data is pro-
grammed using hot electron injection.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
3