1SMA4741 thru 1SMA200Z
RATINGS ANAD CHARACTERISTIC CURVES
(1SMA4741 THRU 1SMA200Z)
FIG.6- TYPICAL CAPACITANCE versus Vz
400
300
200
C, CAPACITANCE (pF)
FIG.7- TEMPERATURE COEFFICIENTS
a-RANGE FOR UNITS TO 12 VOLTS
OV
Z
, TEMPERAYURE COEFFICIENT (mV/
o
C)
+12
+10
+8.0
+6.0
+4.0
+2.0
0
-2.0
-4.0
2
3
4
5
6
7
8
9
10
11
12
V
Z
, ZENER VOLTAGE (VOLTS)
100
0V BIAS
1.0V BIAS
10
8
4
1
RANGE
V
Z
@ I
ZT
50% OF BREAKDOWN BIAS
10
V
Z
, FORWARD VOLTAGE (VOLTS)
100
FIG.8- TEMPERATURE COEFFICIENTS
b-RANGE FOR UNITS 11 TO 100 VOLTS
FIG.9- EFFECT OF ZENER CURRENT
OV
Z
, TEMPERAYURE COEFFICIENT (mV/
o
C)
OV
Z
, TEMPERAYURE COEFFICIENT (mV/
o
C)
100
70
50
30
20
10
7
5
3
2
1
10
20
30
50
70
100
V
Z
, ZENER VOLTAGE (VOLTS)
+6.0
+4.0
V
Z
@ I
ZT
TJ=25
o
C
+2.0
RANGE
V
Z
@ I
ZT
20mA
0
0.01mA
1.0mA
NOTE: BELOW 3 VOLTS AND ABOVE a VOLTS
CHANGES IN ZENER CURRENT OO NOT
AFFECT TEMPERATURE COEFFICIENTS
-2.0
-4.0
3
4
5
6
7
8
V
Z
, ZENER VOLTAGE (VOLTS)
FIG.10- MAXIMUM SURGE POWER
Ppk, PEAK SURGE POWER IWATTSO
100
70
50
30
20
10
7
5
3
2
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
PW, PULSE WIDTH (ms)
0.8V
-10V
NON
11V
-9
-RE
PET
ITIV
E
1V N
ON-
REP
5% D
UTY C
YCLE
ETIT
IVE
RECTANGULAR
WAVEFORM
o
TJ = 25 C PRIOR TO
INITIAL PULSE
10% DUT
Y
CYCLE
20% DUTY CYCLE
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
08/22/2007 Rev.1.00
www.SiliconStandard.com
4
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