BAV70LT1
Switching Diode
FEATURES
Power dissipation, P
D:
225 mW (Tamb=25℃)
Forward Current, I
F:
200 mA
Reverse Voltage, V
R
:70 V
Operating and storage junction temperature range:
T
J
,
T
stg
: -55℃ to +150℃
SOT-23 Plastic-Encapsulate package
Device Making: A4
ELECTRICAL CHARACTERISTICS
Note: Unless otherwise specified, these specifications apply over the operating ambient
temperature of 25℃.
12/20/2006 Rev. 1.00
www.SiliconStandard.com
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