BAV74LT1 参数 Datasheet PDF下载

BAV74LT1

Switching Diode

FEATURES

Power dissipation, P

D

: 225 mW (T

A

=25℃)

Forward Current, I

F

: 200 mA

Reverse Voltage, V

R

: 50 V

Operating and storage junction temperature

range: T

J

, T

stg

: -55℃ to +150℃

SOT-23 Plastic-Encapsulate package

Device Making: JA

ELECTRICAL CHARACTERISTICS

Note:

Unless otherwise specified, these specifications apply over the operating ambient temperature of 25℃.

01/14/2007 Rev. 1.00

www.SiliconStandard.com

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